TITLE

Continuous-wave InGaN multiple-quantum-well laser diodes on copper substrates

AUTHOR(S)
Wong, William S.; Kneissl, Michael; Mei, Ping; Treat, David W.; Teepe, Mark; Johnson, Noble M.
PUB. DATE
February 2001
SOURCE
Applied Physics Letters;2/26/2001, Vol. 78 Issue 9, p1198
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Continuous-wave (cw) indium-gallium nitride multiple-quantum-well laser diodes (LDs) were transferred from sapphire onto copper substrates using a two-step laser lift-off process. Reduced threshold currents and increased differential quantum efficiencies were measured for LDs on Cu due to a 50% reduction of the thermal impedance. Light output for LDs on Cu was three times greater than comparable LDs on sapphire with a maximum output of 30 mW. CW operation was possible up to heatsink temperatures of 90 °C for LDs on Cu. © 2001 American Institute of Physics.
ACCESSION #
4711140

 

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