TITLE

Coherent optical control of acoustic phonon oscillations in InGaN/GaN multiple quantum wells

AUTHOR(S)
Sun, Chi-Kuang; Huang, Yue-Kai; Liang, Jian-Chin; Abare, Amber; DenBaars, Steven P.
PUB. DATE
February 2001
SOURCE
Applied Physics Letters;2/26/2001, Vol. 78 Issue 9, p1201
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
We demonstrate coherent optical control of phonon oscillations using a femtosecond control pulse. The experiments were performed in InGaN/GaN multiple quantum wells. Coherent acoustic phonon oscillations was initiated with an UV femtosecond pulse. The subsequent manipulation, including magnitude and phase, of the coherent acoustic phonon oscillations was achieved using another UV femtosecond pulse by controlling the pulse time delay and intensity. © 2001 American Institute of Physics.
ACCESSION #
4711139

 

Related Articles

  • Interband optical properties of silicon [001] quantum wells using a two-conduction-band k · p model. Michelini, Fabienne; Ouerghi, Issam // Applied Physics Letters;11/28/2011, Vol. 99 Issue 22, p221912 

    Using analytical k · p calculations, we are able to describe the zone-center interband optical properties of Si [001] quantum wells in agreement with first principle calculations. Within the k · p band formalism, we understand how the sp*-like character of the conduction band minimum...

  • Temperature-dependent carrier tunneling for self-assembled InAs/GaAs quantum dots with a GaAsN quantum well injector. Jin, C. Y.; Ohta, S.; Hopkinson, M.; Kojima, O.; Kita, T.; Wada, O. // Applied Physics Letters;4/12/2010, Vol. 96 Issue 15, p151104 

    We have investigated the carrier tunneling process in a quantum-dot (QD) tunnel injection structure, which employs a GaAs1-xNx quantum well (QW) as a carrier injector. The influence of the barrier thickness between the GaAs1-xNx well and InAs dot layer has been studied by temperature-dependent...

  • Energy level schemes for far-infrared quantum well lasers. Lyubomirsky, I.; Hu, Q. // Applied Physics Letters;7/20/1998, Vol. 73 Issue 3 

    We analyze the physics of three-level and four-level systems for optically pumped far-infrared quantum well lasers. The higher complexity of the four-level system offers a great advantage because it gives more flexibility to design the dipole matrix elements and phonon scattering rates to...

  • Scattering of electrons by confined interface polar optical phonons in a double-barrier heterostructure. Požela, J.; Požela, K.; Jucienė, V. // Semiconductors;Sep2007, Vol. 41 Issue 9, p1074 

    It is shown that capture of the surface (interface) phonons can occur in a double-barrier heterostructure in addition to the capture of bulk polar optical phonons. The strength of interaction of electrons with confined interface phonons becomes lower as the thickness of the phonon well (a...

  • Optical properties of quantum steps. Shen, H.; Pollak, Fred H.; Tsu, Raphael // Applied Physics Letters;7/2/1990, Vol. 57 Issue 1, p13 

    We have developed a method to calculate the density of states of quantum steps which allows us to sum the optical transitions for the determination of optical properties. We have demonstrated that quantum steps introduce quasistationary states. The calculated peaks agree well with the...

  • Photoluminescence and phonon satellites of single InGaN/GaN quantum wells with varying GaN cap thickness. Tan, L. T.; Martin, R. W.; O’Donnell, K. P.; Watson, I. M. // Applied Physics Letters;9/4/2006, Vol. 89 Issue 10, p101910 

    Variations in thickness of the GaN caps above single InGaN quantum wells have been studied using photoluminescence spectroscopy. Data are presented from two series of samples designed to promote energy transfer to luminescent species on the surface. Improvements in the optical properties as the...

  • Temperature dependence of exciton-surface plasmon polariton coupling in Ag, Au, and Al films on InxGa1-xN/GaN quantum wells studied with time-resolved cathodoluminescence. Estrin, Y.; Rich, D. H.; Keller, S.; DenBaars, S. P. // Journal of Applied Physics;2015, Vol. 117 Issue 4, p043105-1 

    The optical properties and coupling of excitons to surface plasmon polaritons (SPPs) in Ag, Au, and Al-coated InxGa1-xN/GaN multiple and single quantum wells (SQWs) were probed with timeresolved cathodoluminescence. Excitons were generated in the metal coated SQWs by injecting a pulsed...

  • Intersubband transitions in InxGa1-xN/InyGa1-yN/GaN staggered quantum wells. Hasan Yıldırım; Bulent Aslan // Journal of Applied Physics;2014, Vol. 115 Issue 16, p164306-1 

    Intersubband transition energies and absorption lineshape in staggered InGaN/GaN quantum wells surrounded by GaN barriers are computed as functions of structural parameters such as well width, In concentrations, and the doping level in the well. Schrödinger and Poisson equations are solved...

  • Interband Optical Transition Energy And Oscillator Strength In A Lead Based CdSe Quantum Dot QuantumWell Heterostructure. Saravanamoorthy, S. N.; Peter, A. John // AIP Conference Proceedings;2015, Vol. 1665, p1 

    Binding energies of the exciton and the interband optical transition energies are studied in a CdSe/ Pb1-xCdxSe/CdSe spherical quantum dot-quantum well nanostructure taking into account the geometrical confinement effect. The core and shell are taken as the same material. The initial and final...

Share

Read the Article

Courtesy of VIRGINIA BEACH PUBLIC LIBRARY AND SYSTEM

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics