Electronic and chemical passivation of hexagonal 6H-SiC surfaces by hydrogen termination

Sieber, N.; Mantel, B. F.; Seyller, Th.; Ristein, J.; Ley, L.; Heller, T.; Batchelor, D. R.; Schmeißer, D.
February 2001
Applied Physics Letters;2/26/2001, Vol. 78 Issue 9, p1216
Academic Journal
Hydrogenation of 6H-SiC (0001) and (0001¯) is achieved by high-temperature hydrogen treatment. Both surfaces show a low-energy electron diffraction pattern representative of unreconstructed surfaces of extremely high crystallographic order. On SiC(0001), hydrogenation is confirmed by the observation of sharp Si-H stretching modes. The absence of surface band bending for n- and p-type samples is indicative of electronically passivated surfaces with densities of charged surface states in the gap of below 7x10[sup 10] cm[sup -2] for p-type and 1.7x10[sup 12] cm[sup -2] for n- type samples, respectively. Even after two days in air, the surfaces show no sign of surface oxide in x-ray photoelectron spectroscopy. © 2001 American Institute of Physics.


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