Emission properties of an amorphous AlN:Cr[sup 3+] thin-film phosphor

Caldwell, M. L.; Martin, A. L.; Dimitrova, V. I.; Van Patten, P. G.; Kordesch, M. E.; Richardson, H. H.
February 2001
Applied Physics Letters;2/26/2001, Vol. 78 Issue 9, p1246
Academic Journal
Chromium-doped aluminum nitride (AlN:Cr) films were grown on p-doped silicon (111) by rf magnetron sputtering in a nitrogen atmosphere at a pressure of 10[sup -4] Torr. Film thickness was typically 200 nm. After growth, the films were "activated" at ∼1300 K for 30 min in a nitrogen atmosphere. Films activated in this manner exhibit intense cathodoluminescence and photoluminescence emission. Spectral evidence demonstrates conclusively that the luminescent centers are Cr[sup 3+] ions. © 2001 American Institute of Physics.


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