TITLE

SiGe-on-insulator prepared by wafer bonding and layer transfer for high-performance field-effect transistors

AUTHOR(S)
Huang, L. J.; Chu, J. O.; Canaperi, D. F.; D'Emic, C. P.; Anderson, R. M.; Koester, S. J.; Wong, H.-S. Philip
PUB. DATE
February 2001
SOURCE
Applied Physics Letters;2/26/2001, Vol. 78 Issue 9, p1267
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
SiGe-on-insulator material was fabricated by wafer bonding and hydrogen-induced layer transfer techniques. The transferred SiGe layer is strain relaxed and has a Ge content ranging from 15% to 25%. High-quality strained Si layers were grown on the SiGe-on-insulator substrates by the UHV/chemical vapor deposition process at 550 °C. An electron mobility of 40 000 cm[sup 2]/V s in a modulation-doped Si/SiGe heterostructure was achieved at 30 K on a SiGe-on-insulator substrate. © 2001 American Institute of Physics.
ACCESSION #
4711115

 

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