Magnetic and optical properties of GaMnN magnetic semiconductor

Zaja¸c, M.; Doradzinski, R.; Gosk, J.; Szczytko, J.; Lefeld-Sosnowska, M.; Kaminska, M.; Twardowski, A.; Palczewska, M.; Grzanka, E.; Ge¸bicki, W.
February 2001
Applied Physics Letters;2/26/2001, Vol. 78 Issue 9, p1276
Academic Journal
Microcrystalline Ga[sub 1-x]Mn[sub x]N samples with Mn content up to x=0.005 were grown by an ammonothermal method and were studied using various techniques. X-ray diffraction showed characteristic diffraction lines for hexagonal GaN phase mixed with a small contribution (<5%) from the Mn[sub 3]N[sub 2] phase. Raman spectra exhibited characteristic peaks of pure GaN and modes that could be associated with Mn-induced lattice disorder. Electron spin resonance and magnetization measurements were consistent with the dominant Mn[sup 2+](d[sup 5]) configuration of spin S=5/2 which is responsible for the observed paramagnetic behavior of the GaMnN material. © 2001 American Institute of Physics.


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