High-performance metal-ferroelectric-insulator-semiconductor structures with a damage-free and hydrogen-free silicon-nitride buffer layer

Fujisaki, Yoshihisa; Kijima, Takeshi; Ishiwara, Hiroshi
February 2001
Applied Physics Letters;2/26/2001, Vol. 78 Issue 9, p1285
Academic Journal
We developed high-performance metal-ferroelectric-insulator-semiconductor (MFIS) structures with a damage-free and hydrogen-free Si[sub 3]N[sub 4] buffer layer as an insulator. We fabricated Si[sub 3]N[sub 4] films by nitriding Si substrates with N[sub 2] and/or atomic N radicals generated by an rf radical cell. In contrast to conventional Si[sub 3]N[sub 4] films, the radical-nitride Si[sub 3]N[sub 4] films showed no hysteresis or flat-band shift in the capacitance-voltage (C-V) characteristics even after high-temperature treatments, such as crystallization annealing of ferroelectric thin films deposited on the buffer Si[sub 3]N[sub 4]. Using this radical nitride Si[sub 3]N[sub 4] as a buffer layer, we fabricated MFIS diodes with a Pt/Bi[sub 3.25]La[sub 0.75]Ti[sub 3]O[sub 12]/Si[sub 3]N[sub 4]/Si structure. These diodes had good hysteresis in their C-V characteristics, resulting from remnant polarization of the ferroelectric films. However, no other parasitic effects originating in charge trapping and/or detrapping were observed. © 2001 American Institute of Physics.


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