TITLE

Electrochemical carbon nanotube field-effect transistor

AUTHOR(S)
Kru¨ger, M.; Buitelaar, M. R.; Nussbaumer, T.; Scho¨nenberger, C.; Forró, L.
PUB. DATE
February 2001
SOURCE
Applied Physics Letters;2/26/2001, Vol. 78 Issue 9, p1291
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
We explore the electric-field effect of carbon nanotubes (NTs) in electrolytes. Due to the large gate capacitance, Fermi energy (E[sub F]) shifts of order ±1 V can be induced, enabling to tune NTs from p to n-type. Consequently, large resistance changes are measured. At zero gate voltage, the NTs are hole-doped in air with |E[sub F]|approx. 0.3-0.5 eV, corresponding to a doping level of approx. 10[sup 13] cm[sup -2]. Hole-doping increases in the electrolyte. © 2001 American Institute of Physics.
ACCESSION #
4711107

 

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