Self-organized quantum wires formed by elongated dislocation-free islands in (In,Ga)As/GaAs(100)

Ma, Wenquan; No¨tzel, Richard; Trampert, Achim; Ramsteiner, Manfred; Zhu, Haijun; Scho¨nherr, Hans-Peter; Ploog, Klaus H.
February 2001
Applied Physics Letters;2/26/2001, Vol. 78 Issue 9, p1297
Academic Journal
Long and fairly uniform quantum wire arrays have been fabricated by the growth of (In,Ga)As/GaAs multilayer structures. The structural properties of the quantum wires are characterized by atomic force microscopy, x-ray diffractometry, and transmission electron microscopy. The lateral carrier confinement in the quantum wires is confirmed by linear polarization dependent photoluminescence (PL) and magneto-PL measurements. © 2001 American Institute of Physics.


Related Articles

  • Annealing induced nanostructure and photoluminescence property evolution in solution-processed Mg-alloyed ZnO nanowires. Shimpi, Paresh; Yong Ding; Suarez, Ernesto; Ayers, John; Pu-Xian Gao // Applied Physics Letters;9/6/2010, Vol. 97 Issue 10, p103104 

    Solution-processed Mg-alloyed ZnO nanowire arrays have been achieved recently without using high temperature annealing process. By introducing thermal annealing processes in oxygen-rich ambient condition, the UV near-band-edge (NBE) emission was surprisingly mitigated until disappeared with...

  • Mechanistic investigation of ZnO nanowire growth. Rackauskas, Simas; Nasibulin, Albert G.; Jiang, Hua; Tian, Ying; Statkute, Gintare; Shandakov, Sergey D.; Lipsanen, Harri; Kauppinen, Esko I. // Applied Physics Letters;11/2/2009, Vol. 95 Issue 18, p183114 

    ZnO nanowire (NW) growth mechanism was investigated in a nonvapor and noncatalytic approach for the controlled NW synthesis in a second time scale. The experimental results showed what ZnO NW growth was determined by migration of zinc interstitials and vacancies in a ZnO layer, which should be...

  • Synthesis of ZnO Nanowire Heterostructures by Laser Ablation and Their Photoluminescence. Nakamura, Daisuke; Matsumoto, Takafumi; Kumeda, Akio; Toya, Kazuyuki; Okazaki, Kota; Higashihata, Mitsuhiro; Okada, Tatsuo // Journal of Laser Micro / Nanoengineering;2011, Vol. 6 Issue 1, p23 

    ZnO nano-crystals have been paid a great attention as building blocks for the optoelectronic devices, such as an UV-LED. We have been succeeded in growing ZnO nanostructures, such as vertically-aligned ZnO nanowires and nanowalls, by a newly developed nanoparticle-assisted pulsed-laser...

  • InAs/InGaAsP sidewall quantum dots on shallow-patterned InP (311)A. Zhou, D.; Nötzel, R.; van Otten, F. W. M.; van Veldhoven, P. J.; Eijkemans, T. J. // Journal of Applied Physics;9/15/2006, Vol. 100 Issue 6, p063505 

    Highly strained InAs quantum dots (QDs) embedded in InGaAsP are formed at the fast-growing [01-1] mesa sidewall on shallow-patterned InP (311)A substrates by chemical beam epitaxy. Temperature dependent photoluminescence (PL) reveals efficient carrier transfer from the adjacent dashlike QDs in...

  • Formation and electron activation energy of self-assembled CdTe quantum wires grown on ZnTe buffer layers. Kim, T. W.; Lee, E. H.; Lee, K. H.; Kim, J. S.; Park, H. L. // Applied Physics Letters;11/17/2003, Vol. 83 Issue 20, p4235 

    Self-assembled CdTe quantum wires (QWRs) were grown on ZnTe buffer layers by using molecular-beam epitaxy. Atomic force microscopy images showed that preferentially oriented CdTe QWRs were formed on ZnTe buffer layers. The activation energy of the electrons confined in the CdTe QWRs, as obtained...

  • Enhancement of the photoluminescence of silicon oxide defect states by combining silicon oxide with silicon nanowires. Noé, P.; Guignard, J.; Gentile, P.; Delamadeleine, E.; Calvo, V.; Ferret, P.; Dhalluin, F.; Baron, T. // Journal of Applied Physics;7/1/2007, Vol. 102 Issue 1, p016103 

    The authors show an efficient room-temperature visible photoluminescence source obtained by combining silicon nanowires (SiNWs) and silicon oxide (SiO2) defect states. The SiNWs are synthesized by a Vapor-Liquid-Solid mechanism and then covered by SiO2 deposited by standard deposition...

  • Improved conductivity and long-term stability of sulfur-passivated n-GaAs nanowires. Tajik, N.; Chia, A. C. E.; LaPierre, R. R. // Applied Physics Letters;5/14/2012, Vol. 100 Issue 20, p203122 

    The surface passivation of n-type GaAs nanowires (NWs) by ammonium polysulfide solution, (NH4)2Sx, is described. The passivation resulted in a two order of magnitude increase in current density in an ensemble NW device. A depletion and recombination model is used to explain the results in terms...

  • Indirect optical transition due to surface band bending in ZnO nanotubes. Yang, L. L.; Zhao, Q. X.; Israr, M. Q.; Sadaf, J. R.; Willander, M.; Pozina, G.; Yang, J. H. // Journal of Applied Physics;Nov2010, Vol. 108 Issue 10, p103513 

    ZnO nanotubes (ZNTs) have been successfully evolved from ZnO nanorods (ZNRs) by a simple chemical etching process. Two peaks located at 382 and 384 nm in the UV emission region has been observed in the room temperature photoluminescence (PL) spectrum of ZNTs since the surface band bending in...

  • Spatially resolved luminescence investigation of AlGaAs single quantum wires modified... Xingquan Liu; Wei Lu; Zhi Feng Li; Yi Dong Chen; Shen, S.C.; Fu, Y.; Willander, M.; Hark Hoe Tan; Yuan, S.; Jagadish, C.; Zou, J.; Cockayne, D.J.H. // Applied Physics Letters;11/22/1999, Vol. 75 Issue 21, p3339 

    Studies single Al[sub 0.5]Ga[sub 0.5]As/GaAs V-groove quantum wires modified by selective implantation and rapid thermal annealing by spatially resolved microphotoluminescence. Photoluminescence from the necking region; Degradation in the optical properties quantum wires and quantum well...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics