TITLE

Self-organized quantum wires formed by elongated dislocation-free islands in (In,Ga)As/GaAs(100)

AUTHOR(S)
Ma, Wenquan; No¨tzel, Richard; Trampert, Achim; Ramsteiner, Manfred; Zhu, Haijun; Scho¨nherr, Hans-Peter; Ploog, Klaus H.
PUB. DATE
February 2001
SOURCE
Applied Physics Letters;2/26/2001, Vol. 78 Issue 9, p1297
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Long and fairly uniform quantum wire arrays have been fabricated by the growth of (In,Ga)As/GaAs multilayer structures. The structural properties of the quantum wires are characterized by atomic force microscopy, x-ray diffractometry, and transmission electron microscopy. The lateral carrier confinement in the quantum wires is confirmed by linear polarization dependent photoluminescence (PL) and magneto-PL measurements. © 2001 American Institute of Physics.
ACCESSION #
4711105

 

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