TITLE

III-nitride blue microdisplays

AUTHOR(S)
Jiang, H. X.; Jin, S. X.; Li, J.; Shakya, J.; Lin, J. Y.
PUB. DATE
February 2001
SOURCE
Applied Physics Letters;2/26/2001, Vol. 78 Issue 9, p1303
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Prototype blue microdisplays have been fabricated from InGaN/GaN quantum wells. The device has a dimension of 0.5x0.5 mm[sup 2] and consists of 10x10 pixels 12 μm in diameter. Emission properties such as electroluminescence spectra, output power versus forward current (L-I) characteristic, viewing angle, and uniformity have been measured. Due to the unique properties of III-nitride wide-band-gap semiconductors, microdisplays fabricated from III nitrides can potentially provide unsurpassed performance, including high-brightness/resolution/contrast, high-temperature/high-power operation, high shock resistance, wide viewing angles, full-color spectrum capability, long life, high speed, and low-power consumption, thus providing an enhancement and benefit to the present capabilities of miniature display systems. © 2001 American Institute of Physics.
ACCESSION #
4711103

 

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