TITLE

Effect of photoelectrochemical oxidation on properties of GaN epilayers grown by molecular beam epitaxy

AUTHOR(S)
Fu, D. J.; Kang, T. W.; Yuldashev, Sh. U.; Kim, N. H.; Park, S. H.; Yun, J. S.; Chung, K. S.
PUB. DATE
February 2001
SOURCE
Applied Physics Letters;2/26/2001, Vol. 78 Issue 9, p1309
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
GaN epilayers grown by molecular beam epitaxy were photoelectrochemically (PEC) oxidized in an aqueous KOH solution. The oxidation effect was investigated by defect-related photoconductivity and photoluminescence. The PEC treated GaN show decreased extrinsic photoresponse and concentration of deep level states in comparison with the as-grown sample. The PEC process also results in enhanced donor-bound exciton photoluminescence at 3.47 eV and restrained 3.4 eV band. No strain is detected in the PEC oxidized GaN. The 3.4 eV band is related to structural defects instead of oxygen impurities. Rather, the defects can be passivated by the PEC oxidation. © 2001 American Institute of Physics.
ACCESSION #
4711101

 

Related Articles

  • Band alignment at a ZnO/GaN (0001) heterointerface. Hong, Soon-Ku; Hanada, Takashi; Makino, Hisao; Chen, Yefan; Ko, Hang-Ju; Yao, Takafumi; Tanaka, Akinori; Sasaki, Hiroyuki; Sato, Shigeru // Applied Physics Letters;5/21/2001, Vol. 78 Issue 21, p3349 

    We report the experimental results of the valence band offset at a ZnO/GaN (0001) heterointerface. The ZnO/GaN (0001) heterointerface is prepared by growing a ZnO layer on (0001) GaN/Al[sub 2]O[sub 3], in which the ZnO layer is epitaxially deposited by plasma-assisted molecular-beam epitaxy,...

  • Optical properties of GaN grown on ZnO by reactive molecular beam epitaxy. Hamdani, F.; Botchkarev, A. // Applied Physics Letters;1/27/1997, Vol. 70 Issue 4, p467 

    Examines the optical properties of high quality gallium nitride (GaN) grown on ZnO substrates by reactive molecular beam epitaxy. Implications of photoluminescence and reflectivity measurements; Absence of yellow photoluminescence band from the film; Ineffectivity of polarized reflectivity to...

  • Ga-doped ZnO films grown on GaN templates by plasma-assisted molecular-beam epitaxy. Ko, H. J.; Ko, H.J.; Chen, Y. F.; Chen, Y.F; Hong, S. K.; Hong, S.K.; Wenisch, H.; Yao, T.; Look, D. C.; Look, D.C. // Applied Physics Letters;12/4/2000, Vol. 77 Issue 23 

    We have investigated the structural and optical properties of Ga-doped ZnO films grown on GaN templates by plasma-assisted molecular-beam epitaxy. The carrier concentration in Ga-doped ZnO films can be controlled from 1.33x10[sup 18]/cm[sup 3] to 1.13x10[sup 20]/cm[sup 3]. Despite high Ga...

  • Epitaxial growth of Sc2O3 films on GaN. Herrero, A. M.; Gila, B. P.; Abernathy, C. R.; Pearton, S. J.; Craciun, V.; Siebein, K.; Ren, F. // Applied Physics Letters;8/28/2006, Vol. 89 Issue 9, p092117 

    Thin films of scandium oxide were epitaxially deposited on GaN via molecular beam epitaxy using elemental Sc and an oxygen plasma. After growth, the Sc2O3 films were annealed at a temperature of 800 °C for 5 min in the growth chamber. The structural quality of Sc2O3 films, before and after...

  • MgO epitaxy on GaN (0002) surfaces by molecular beam epitaxy. Craft, H. S.; Ihlefeld, J. F.; Losego, M. D.; Collazo, R.; Sitar, Z.; Maria, J.-P. // Applied Physics Letters;5/22/2006, Vol. 88 Issue 21, p212906 

    We report on the epitaxial deposition of magnesium oxide films with [111] crystallographic orientation on (0002) GaN by molecular beam epitaxy. Specifically, we use an adsorption controlled growth mechanism to initiate the growth process. Electron diffraction shows a spotty intense pattern...

  • Faceted inversion domain boundary in GaN films doped with Mg. Romano, L. T.; Romano, L.T.; Northrup, J. E.; Northrup, J.E.; Ptak, A. J.; Ptak, A.J.; Myers, T. H.; Myers, T.H. // Applied Physics Letters;10/16/2000, Vol. 77 Issue 16 

    Homoepitaxial GaN films, doped with Mg, were grown by rf-plasma molecular-beam epitaxy on Ga-polarity (0001) templates. Convergent-beam electron diffraction analysis establishes that the film polarity changes from [0001] to [0001_] when the Mg flux during growth is approximately 1 ML/s....

  • Preconditioning of c-plane sapphire for GaN epitaxy by radio frequency plasma nitridation. Heinlein, Christian; Grepstad, Jostein // Applied Physics Letters;7/21/1997, Vol. 71 Issue 3, p341 

    Improves crystalline quality of molecular beam epitaxy grown layers of gallium nitride on sapphire by nitridation of the substrate. Examination of the case for nitridation of c-plane sapphire; Formation of a monolayer of surface nitride; Removal of adventitious surface carbon upon heat...

  • Gas source molecular beam epitaxy of GaN with hydrazine on spinel substrates. Nikishin, S. A.; Temkin, H.; Antipov, V. G.; Guriev, A. I.; Zubrilov, A. S.; Elyukhin, V. A.; Faleev, N. N.; Kyutt, R. N.; Chin, A. K. // Applied Physics Letters;5/11/1998, Vol. 72 Issue 19 

    Growth of high quality wurtzite-structure GaN layers on (111) MgAl[sub 2]O[sub 4] by gas source molecular beam epitaxy is described. Hydrazine was used as a source of active nitrogen. In situ reflection high energy electron diffraction was used to monitor the growth mode. Two-dimensional growth...

  • Characterization of the surface irregularities of cubic GaN using micro-Raman spectroscopy. Liu, Ming S.; Prawer, Steven; Bursill, Les A.; As, D. J.; Brenn, R. // Applied Physics Letters;4/30/2001, Vol. 78 Issue 18, p2658 

    The surface irregularities of molecular-beam-epitaxy-grown cubic GaN on GaAs substrates were characterized by micro-Raman spectroscopy. Some surface irregularities are found to be the result of the mixed phases of cubic (zinc-blende) and hexagonal (wurtzite) GaN, while others originate from the...

Share

Read the Article

Courtesy of VIRGINIA BEACH PUBLIC LIBRARY AND SYSTEM

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics