InGaAsNSb/GaAs quantum wells for 1.55 μm lasers grown by molecular-beam epitaxy

Yang, X.; Héroux, J. B.; Mei, L. F.; Wang, W. I.
June 2001
Applied Physics Letters;6/25/2001, Vol. 78 Issue 26, p4068
Academic Journal
InGaAsNSb/GaAs quantum wells (QWs) were grown by solid-source molecular-beam epitaxy using a N[sub 2] radio frequency plasma source. The effect of adding Sb during growth of InGaAsN/GaAs QWs was studied. X-ray diffraction, reflection high-energy electron diffraction and transmission electron microscopy studies indicate that Sb suppresses the three-dimensional growth and improves the interface of the QWs. X-ray diffraction and secondary ion mass spectroscopy analysis show that Sb gets incorporated into the quantum well, which becomes a quinternary compound that was previously unexplored. The introduction of Sb during growth of InGaAsN/GaAs QWs significantly enhances the optical properties of the QWs. 1.53 μm room-temperature photoluminescence was obtained from InGaAsNSb/GaAs QWs, which demonstrates the potential of fabricating 1.55 μm InGaAsNSb/GaAs QW lasers for long-haul applications. © 2001 American Institute of Physics.


Related Articles

  • Low-threshold operation of AlGaAs/GaAs multiple quantum well lasers grown on Si substrates by molecular beam epitaxy. Chong, Tow C.; Fonstad, Clifton G. // Applied Physics Letters;7/27/1987, Vol. 51 Issue 4, p221 

    We report the first AlGaAs-GaAs multiple quantum well (MQW) lasers fabricated on (001)Si substrates by molecular beam epitaxy (MBE) with relatively thin buffer layers. The lasers have broad-area (170×240 μm) pulsed threshold current density of 3.2 kA/cm2 at room temperature, the lowest...

  • High-power low-threshold graded-index separate confinement heterostructure AlGaAs single quantum well lasers on Si substrates. Kim, Jae-Hoon; Lang, Robert J.; Radhakrishnan, Gouri; Katz, Joseph; Narayanan, Authi A.; Craig, Richard R. // Applied Physics Letters;10/9/1989, Vol. 55 Issue 15, p1492 

    A high-power low-threshold graded-index separate confinement heterostructure AlGaAs single quantum well laser on Si substrates has been demonstrated for the first time by a hybrid growth of migration-enhanced molecular beam epitaxy followed by metalorganic vapor phase epitaxy. The quantum well...

  • High-power single-mode strained single quantum well InGaAs/AlGaAs lasers grown by molecular beam epitaxy on nonplanar substrates. Arent, D. J.; Brovelli, L.; Jäckel, H.; Marclay, E.; Meier, H. P. // Applied Physics Letters;5/14/1990, Vol. 56 Issue 20, p1939 

    Strained single quantum well InGaAs/AlGaAs graded-index separate confinement heterostructure lasers have been grown by molecular beam epitaxy over nonplanar substrates. In addition to the low threshold currents provided in situ by lateral current blocking pn junctions obtained by plane-dependent...

  • High-speed modulation of strained-layer InGaAs-GaAs-AlGaAs ridge waveguide multiple quantum well... Offsey, S.D.; Lester, L.F.; Schaff, W.J.; Eastman, L.F. // Applied Physics Letters;5/27/1991, Vol. 58 Issue 21, p2336 

    Describes the growth of strained-layer indium gallium arsenide (InGaAs)-GaAs-aluminum GaAs multiple quantum well lasers by molecular beam epitaxy. Processing of the ridge waveguide structures; Threshold currents of the devices; Determination of the microwave modulation bandwidth.

  • Patterned quantum well semiconductor injection laser grown by molecular beam epitaxy. Kapon, E.; Harbison, J. P.; Yun, C. P.; Stoffel, N. G. // Applied Physics Letters;2/22/1988, Vol. 52 Issue 8, p607 

    A novel quantum well semiconductor laser structure is described. This patterned quantum well laser utilizes the thickness variations and nonplanarity exhibited by quantum wells grown on grooved substrates in order to achieve lateral carrier confinement and real index waveguiding. Index guided...

  • Self-aligned InGaAs/GaAs/InGaP quantum well lasers prepared by gas-source molecular beam epitaxy.... Chen, Y.K.; Wu, M.C.; Kuo, J.M.; Chin, M.A.; Sergent, A.M. // Applied Physics Letters;12/2/1991, Vol. 59 Issue 23, p2929 

    Presents the fabrication of index-guided self-aligned InGaAs/GaAs/InGaP quantum well lasers by gas-source molecular beam epitaxy with two growth steps. Use of aluminum-free InGaP as cladding layers; Measurement of a room temperature continuous wave lasing threshold current.

  • Continuous wave operation on extremely low-temperature (375 degrees C)-grown AlGaAs.... Miyazawa, Sei-ichi; Sekiguchi, Yoshinobu; Okuda, Masahiro; Hasegawa, Mitsutoshi; Nojiri, Hidetoshi // Applied Physics Letters;2/8/1993, Vol. 62 Issue 6, p624 

    Describes the continuous wave operation of aluminum gallium arsenide single-quantum-well (SQW) lasers grown by molecular beam epitaxy. Differential quantum efficiency of the ridge-waveguide laser; Fabrication of the laser; Results of the preliminary life test on the SQW lasers.

  • GaAs/GaInAsP quantum well lasers grown by gas-source molecular beam epitaxy. Zhang, G.; Nappi, J. // Applied Physics Letters;2/21/1994, Vol. 64 Issue 8, p1009 

    Examines gallium arsenide/gallium indium arsenide phosphide quantum well lasers by gas-source molecular beam epitaxy. Components of aluminum-free laser structure; Details of the threshold current density; Production of continuous-wave light output power in ridge waveguide lasers.

  • Low-threshold 1.3-mum wavelength, InGaAsP strained-layer multiple quantum well lasers grown by.... Guang-Jye Shiau; Chih-Ping Chao // Applied Physics Letters;8/15/1994, Vol. 65 Issue 7, p892 

    Describes the growth of low-threshold 1.3-micrometer wavelength strained-layer indium gallium arsenic phosphide heterostructure quantum well lasers. Application of gas source molecular beam epitaxy; Value of the lowest threshold current density; Use of silicon-doped (100) indium phosphide...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics