TITLE

Observation of stimulated emission in an ultrashort-period nonsymmetric GaAs/AlAs superlattice

AUTHOR(S)
Litovchenko, V. G.; Korbutyak, D. V.; Bercha, A. I.; Kryuchenko, Yu. V.; Krylyuk, S. G.; Grahn, H. T.; Hey, R.; Ploog, K. H.
PUB. DATE
June 2001
SOURCE
Applied Physics Letters;6/25/2001, Vol. 78 Issue 26, p4085
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Nonsymmetric short-period GaAs/AlAs superlattices, for which the well thickness is at least a factor of 2 larger than the barrier thickness, have been shown to exhibit a direct band gap for any well thickness. These superlattices are characterized by an enhanced intensity of the luminescence as compared to their symmetric indirect-gap counterparts with the same well width, and, thus, may be used as light-emitting devices, in particular, as low-threshold lasers in the red visible spectrum. This conjecture is supported by the observation of stimulated emission at T=80 K for a GaAs/AlAs superlattice with six monolayers well and three monolayers barrier width. © 2001 American Institute of Physics.
ACCESSION #
4711093

 

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