TITLE

Photopumped red-emitting InP/In[sub 0.5]Al[sub 0.3]Ga[sub 0.2]P self-assembled quantum dot heterostructure lasers grown by metalorganic chemical vapor deposition

AUTHOR(S)
Ryou, J. H.; Dupuis, R. D.; Walter, G.; Kellogg, D. A.; Holonyak, N.; Mathes, D. T.; Hull, R.; Reddy, C. V.; Narayanamurti, V.
PUB. DATE
June 2001
SOURCE
Applied Physics Letters;6/25/2001, Vol. 78 Issue 26, p4091
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
We report the 300 K operation of optically pumped red-emitting lasers fabricated from InP self-assembled quantum dots embedded in In[sub 0.5]Al[sub 0.3]Ga[sub 0.2]P layers on GaAs (100) substrates grown by metalorganic chemical vapor deposition. Quantum dots grown at 650 °C on In[sub 0.5]Al[sub 0.3]Ga[sub 0.2]P layers have a high density on the order of 10[sup 10] cm[sup -2] and the dominant size of individual quantum dots ranges from ∼5 to ∼10 nm for 7.5 monolayer "equivalent growth." These InP/In[sub 0.5]Al[sub 0.3]Ga[sub 0.2]P quantum dot heterostructures are characterized by atomic force microscopy, high-resolution transmission electron microscopy, and photoluminescence. Laser structures are prepared from wafers having two vertically stacked InP quantum dot active layers within a 100-nm-thick In[sub 0.5]Al[sub 0.3]Ga[sub 0.2]P waveguide and upper and lower 600 nm InAlP cladding layers. We observe lasing at λ∼680 nm at room temperature in optically pumped samples. © 2001 American Institute of Physics.
ACCESSION #
4711091

 

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