Charge-separation effects in 1.3 μm GaAsSb type-II quantum-well laser gain

Chow, W. W.; Schneider, H. C.
June 2001
Applied Physics Letters;6/25/2001, Vol. 78 Issue 26, p4100
Academic Journal
A microscopic laser theory is used to investigate gain and threshold properties in a GaAsSb quantum-well laser. Depending on the geometry of the type-II quantum-well gain region, there may be appreciable band distortions due to electron-hole charge separation. The charge separation and accompanying band distortions lead to interesting optical behaviors, such as excitation-dependent oscillator strength and band edge energies. Implications to laser operation include significant blueshift of the gain peak with increasing injection current, and inhibition of spontaneous emission, which may result in threshold current reduction. © 2001 American Institute of Physics.


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