Picosecond Z-scan measurements on bulk GaN crystals

Pacebutas, V.; Stalnionis, A.; Krotkus, A.; Suski, T.; Perlin, P.; Leszczynski, M.
June 2001
Applied Physics Letters;6/25/2001, Vol. 78 Issue 26, p4118
Academic Journal
Bulk GaN crystals were characterized by using picosecond laser pulses at λ=0.527 μm and Z-scan techniques. The role of the free-carrier absorption was evaluated by a dynamical, pump-and-probe-type transmitivity measurement. The values of two-photon absorption coefficient (17-20 cm/GW) and refractive index changes at high optical irradiances due to bound (n[sub 2]=-4x10[sup -12] esu) and free (σ[sub r]=-1.0x10[sup -20] cm[sup 3]) electrons in that material were determined. © 2001 American Institute of Physics.


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