TITLE

Optical investigation of strain in Si-doped GaN films

AUTHOR(S)
Sánchez-Páramo, J.; Calleja, J. M.; Sánchez-García, M. A.; Calleja, E.
PUB. DATE
June 2001
SOURCE
Applied Physics Letters;6/25/2001, Vol. 78 Issue 26, p4124
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
The effects of Si doping on the growth mode and residual strain of GaN layers grown on Si(111) substrates by plasma-assisted molecular beam epitaxy are studied by Raman scattering and photoluminescence. As the Si concentration increases a progressive decrease of the high-energy E[sub 2] mode frequency is observed, together with a redshift of the excitonic emission. Both effects indicate an enhancement of the biaxial tensile strain of thermal origin for increasing doping level, which is confirmed by x-ray diffraction measurements. Beyond Si concentrations of 5x10[sup 18] cm[sup -3] both the phonon frequency and the exciton emission energy increase again. This change indicates a partial strain relaxation due to a change in the growth mode. © 2001 American Institute of Physics.
ACCESSION #
4711078

 

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