Optical investigation of strain in Si-doped GaN films

Sánchez-Páramo, J.; Calleja, J. M.; Sánchez-García, M. A.; Calleja, E.
June 2001
Applied Physics Letters;6/25/2001, Vol. 78 Issue 26, p4124
Academic Journal
The effects of Si doping on the growth mode and residual strain of GaN layers grown on Si(111) substrates by plasma-assisted molecular beam epitaxy are studied by Raman scattering and photoluminescence. As the Si concentration increases a progressive decrease of the high-energy E[sub 2] mode frequency is observed, together with a redshift of the excitonic emission. Both effects indicate an enhancement of the biaxial tensile strain of thermal origin for increasing doping level, which is confirmed by x-ray diffraction measurements. Beyond Si concentrations of 5x10[sup 18] cm[sup -3] both the phonon frequency and the exciton emission energy increase again. This change indicates a partial strain relaxation due to a change in the growth mode. © 2001 American Institute of Physics.


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