TITLE

Mass transport growth and optical emission properties of hydride vapor phase epitaxy GaN

AUTHOR(S)
Paskova, T.; Goldys, E. M.; Paskov, P. P.; Wahab, Q.; Wilzen, L.; de Jong, M. P.; Monemar, B.
PUB. DATE
June 2001
SOURCE
Applied Physics Letters;6/25/2001, Vol. 78 Issue 26, p4130
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
The optical emission properties of mass-transport regions of GaN grown by hydride vapor phase epitaxy are studied by cathodoluminescence imaging and spectroscopy. A strong donor-acceptor pair emission is observed from the mass-transport regions. Spatially resolved cathodoluminescence reveals a strong intensity contrast between the exciton and donor-acceptor bands from mass-transport and nontransport regions. Focused Auger electron and x-ray photoelectron spectroscopies were employed to investigate the impurity incorporation in the different regions. A preferential moderate increase of residual impurity incorporation or redistribution in mass-transport regions is suggested to be responsible for the observed change of the dominant radiative mechanism. © 2001 American Institute of Physics.
ACCESSION #
4711076

 

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