Mass transport growth and optical emission properties of hydride vapor phase epitaxy GaN

Paskova, T.; Goldys, E. M.; Paskov, P. P.; Wahab, Q.; Wilzen, L.; de Jong, M. P.; Monemar, B.
June 2001
Applied Physics Letters;6/25/2001, Vol. 78 Issue 26, p4130
Academic Journal
The optical emission properties of mass-transport regions of GaN grown by hydride vapor phase epitaxy are studied by cathodoluminescence imaging and spectroscopy. A strong donor-acceptor pair emission is observed from the mass-transport regions. Spatially resolved cathodoluminescence reveals a strong intensity contrast between the exciton and donor-acceptor bands from mass-transport and nontransport regions. Focused Auger electron and x-ray photoelectron spectroscopies were employed to investigate the impurity incorporation in the different regions. A preferential moderate increase of residual impurity incorporation or redistribution in mass-transport regions is suggested to be responsible for the observed change of the dominant radiative mechanism. © 2001 American Institute of Physics.


Related Articles

  • Investigation of the growth characteristics of epitaxial GaN layers on sapphire by microcathodoluminescence. Usikov, A. S.; Tret’yakov, V. V.; Lundin, V. V.; Zadiranov, Yu. M.; Pushnyı, B. V.; Konnikov, S. G. // Technical Physics Letters;Apr99, Vol. 25 Issue 4, p253 

    A study was made of the growth regimes of undoped epitaxial GaN layers under various substrate nitriding conditions. It was observed that at a nitriding temperature of ∼ 1000°C films are formed with typical growth characteristics in the form of hexagonal pyramids separated by a smoothed...

  • Optical properties of GaN grown by hydride vapor-phase epitaxy. Oh, Eunsoon; Lee, S. K.; Park, S. S.; Lee, K. Y.; Song, I. J.; Han, J. Y. // Applied Physics Letters;1/15/2001, Vol. 78 Issue 3, p273 

    High-quality free-standing GaN was obtained by hydride vapor-phase epitaxy (HVPE) growth and the subsequent removal of the sapphire substrates. In the photoluminescence (PL) spectra of the as-grown HVPE-GaN, we observed a strong phonon replica peak for temperatures higher than 80 K. Both the...

  • Optical characteristics of p-type GaN films grown by plasma-assisted molecular beam epitaxy. Myoung, J. M.; Shim, K. H.; Kim, C.; Gluschenkov, O.; Kim, K.; Kim, S.; Turnbull, D. A.; Bishop, S. G. // Applied Physics Letters;10/28/1996, Vol. 69 Issue 18, p2722 

    Using a molecular beam epitaxy system equipped with an inductively coupled radio frequency nitrogen plasma source, p-type GaN films were grown on sapphire substrates with no postgrowth treatment. Uniformity of the surface morphology and spatial homogeneity of the luminescence of the films were...

  • Fabrication and luminescent properties of core-shell InGaN/GaN multiple quantum wells on GaN nanopillars. Chang, J.-R.; Chang, S.-P.; Li, Y.-J.; Cheng, Y.-J.; Sou, K.-P.; Huang, J.-K.; Kuo, H.-C.; Chang, C.-Y. // Applied Physics Letters;6/25/2012, Vol. 100 Issue 26, p261103 

    Core-shell InGaN/GaN multiple quantum wells (MQWs) on GaN nanopillars were fabricated by top-down etching followed by epitaxial regrowth. The regrowth formed hexagonal sidewalls and pyramids on the nanopillars. The cathodoluminescence of MQWs blue shifts as the location moves from top to bottom...

  • Doping-level-dependent optical properties of GaN:Mn. Gelhausen, O.; Malguth, E.; Phillips, M. R.; Goldys, E. M.; Strassburg, M.; Hoffmann, A.; Graf, T.; Gjukic, M.; Stutzmann, M. // Applied Physics Letters;5/31/2004, Vol. 84 Issue 22, p4514 

    The optical properties of molecular-beam-epitaxy-grown GaN with different Mn-doping levels (5–23×1019 cm-3) were studied by cathodoluminescence (CL) and optical transmission spectroscopy. Transmission measurements at 2 K revealed an absorption peak at 1.414±0.002 eV, which was...

  • Yellow luminescence from precipitates in GaN epilayers. Kang, J.; Ogawa, T. // Applied Physics A: Materials Science & Processing;1999, Vol. 69 Issue 6, p631 

    Abstract. The room-temperature photoluminescence spectra of GaN epilayers with different surface morphologies grown by metalorganic vapor phase epitaxy exhibited a near-band-gap emission peak and a broad emission band in the yellow region. The intensity distributions of the yellow luminescence...

  • Inversion domains triggering recovery of luminescence uniformity in epitaxially lateral overgrown thick GaN film. Kim, Chinkyo; Chinkyo Kim; Yi, Jaehyung; Jaehyung Yi; Yang, Min; Min Yang; Kim, Minhong; Minhong Kim; Jeon, Jina; Jina Jeon; Khym, Sungwon; Sungwon Khym; Cho, Meoungwhan; Meoungwhan Cho; Choi, Yoonho; Yoonho Choi; Leem, Shi-Jong; Shi-Jong Leem; Kim, Seon Tai; Seon Tai Kim // Applied Physics Letters;12/25/2000, Vol. 77 Issue 26 

    A 150 μm-thick GaN layer was grown by halide vapor phase epitaxy utilizing selective lateral overgrowth on a SiO[sub 2]-prepatterned sapphire substrate. A series of optically active regions above the SiO[sub 2] mask was observed in cross sectional monochromatic cathodoluminescence images...

  • Optical phonons of hexagonal and cubic GaN studied by infrared transmission and Raman spectroscopy. Geihler, M.; Ramsteiner, M. // Applied Physics Letters;8/7/1995, Vol. 67 Issue 6, p733 

    Examines the optical phonon modes of gallium nitride (GaN) layers grown on gallium arsenide substrates by molecular beam epitaxy. Details on the crystal structure of GaN; Application of GaN to short-wavelength electronic devices; Identification of the phase composition of GaN.

  • Anomalous features in the optical properties of Al[sub 1-x]In[sub x]N on GaN grown by metal organic vapor phase epitaxy. Yamaguchi, Shigeo; Kariya, Michihiko; Nitta, Shugo; Takeuchi, Tetsuya; Wetzel, Christian; Amano, Hiroshi; Akasaki, Isamu // Applied Physics Letters;2/14/2000, Vol. 76 Issue 7 

    We have studied the optical properties of Al[sub 1-x]In[sub x]N thin films grown on GaN by metal organic vapor phase epitaxy. X-ray diffraction analysis of ω and ω-2θ scans showed that both the compositional fluctuation and the degree of crystalline mosaicity increase with increasing...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics