Structural characterization of InAs/GaAs quantum-dot nanostructures

Pal, D.; Towe, E.; Chen, S.
June 2001
Applied Physics Letters;6/25/2001, Vol. 78 Issue 26, p4133
Academic Journal
We have performed high-resolution x-ray diffraction measurements on vertically aligned InAs/GaAs quantum-dot nanostructures. The measurements were carried out for both the symmetric (004) and asymmetric (113) and (224) Bragg reflections. Theoretical simulations of the rocking curves indicate that the x-ray signal is primarily from the pseudomorphically strained (In,Ga)As wetting layers. The average thickness and indium composition in the wetting layers, as determined from simulations of the rocking curves, were, respectively, 0.72 nm and 88%. Transmission electron microscopy studies show the creation and annihilation of quantum dots with no observable dislocations. © 2001 American Institute of Physics.


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