TITLE

Band gap of amorphous and well-ordered Al[sub 2]O[sub 3] on Ni[sub 3]Al(100)

AUTHOR(S)
Costina, I.; Franchy, R.
PUB. DATE
June 2001
SOURCE
Applied Physics Letters;6/25/2001, Vol. 78 Issue 26, p4139
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
The vibrational and electronic properties of amorphous and well-ordered alumina formed on Ni[sub 3]Al(100) were investigated using high-resolution electron energy loss spectroscopy. The structure of well-ordered alumina was analyzed by low-energy electron diffraction. The amorphous Al[sub 2]O[sub 3] films are prepared by adsorption of O[sub 2] at room temperature, while the well-ordered Al[sub 2]O[sub 3] are obtained by direct oxidation of Ni[sub 3]Al at 1150 K. The band gap energy is ∼3.2 and ∼4.3 eV for amorphous alumina and well-ordered alumina thin films respectively. The lowering of the band gap with respect to the bulk value of Al[sub 2]O[sub 3] is associated with defect-induced states located in the band gap. © 2001 American Institute of Physics.
ACCESSION #
4711072

 

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