Emission wavelength control by potential notch in type-II InAs/GaSb/AlSb intersubband light-emitting structures

Ohtani, K.; Sakuma, H.; Ohno, H.
June 2001
Applied Physics Letters;6/25/2001, Vol. 78 Issue 26, p4148
Academic Journal
A potential notch in the well region is used to control the emission wavelength of type-II InAs/GaSb/AlSb intersubband light-emitting structures. Intersubband absorption measurements are performed to evaluate the subband structure of the active layers and are compared with theory. Type-II quantum cascade structures using these active layers are fabricated and midinfrared intersubband electroluminescence is observed. Calculation indicates that the active layer structure can emit electromagnetic waves in the THz region without employing a wide alloy well. © 2001 American Institute of Physics.


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