Nanometer-scale electrical characterization of stressed ultrathin SiO[sub 2] films using conducting atomic force microscopy

Porti, M.; Nafría, M.; Aymerich, X.; Olbrich, A.; Ebersberger, B.
June 2001
Applied Physics Letters;6/25/2001, Vol. 78 Issue 26, p4181
Academic Journal
A conductive atomic force microscope has been used to electrically stress and to investigate the effects of degradation in the conduction properties of ultrathin (<6 nm) SiO[sub 2] films on a nanometer scale (areas of approx. 100 nm[sup 2]). Before oxide breakdown, switching between two states of well-defined conductivity and sudden changes of conductivity were observed, which are attributed to the capture/release of single charges in the defects generated during stress. © 2001 American Institute of Physics.


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