TITLE

Near-room-temperature operation of an InAs/GaAs quantum-dot infrared photodetector

AUTHOR(S)
Tang, Shiang-Feng; Lin, Shih-Yen; Lee, Si-Chen
PUB. DATE
April 2001
SOURCE
Applied Physics Letters;4/23/2001, Vol. 78 Issue 17, p2428
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
A ten-stacked self-assembled InAs/GaAs quantum-dot infrared photodetector operated in the 2.5-7 μm range by photovoltaic and photoconductive mixed-mode near-room-temperature operation (>=250 K) was demonstrated. The specific peak detectivity D[sup *] is 2.4x10[sup 8] cm Hz[sup 1/2]/W at 250 K. The use of high-band-gap Al[sub 0.3]Ga[sub 0.7]As barriers at both sides of the InAs quantum-dot structure and the long carrier recombination time are the key factors responsible for its near-room-temperature operation. © 2001 American Institute of Physics.
ACCESSION #
4711045

 

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