Near-room-temperature operation of an InAs/GaAs quantum-dot infrared photodetector

Tang, Shiang-Feng; Lin, Shih-Yen; Lee, Si-Chen
April 2001
Applied Physics Letters;4/23/2001, Vol. 78 Issue 17, p2428
Academic Journal
A ten-stacked self-assembled InAs/GaAs quantum-dot infrared photodetector operated in the 2.5-7 μm range by photovoltaic and photoconductive mixed-mode near-room-temperature operation (>=250 K) was demonstrated. The specific peak detectivity D[sup *] is 2.4x10[sup 8] cm Hz[sup 1/2]/W at 250 K. The use of high-band-gap Al[sub 0.3]Ga[sub 0.7]As barriers at both sides of the InAs quantum-dot structure and the long carrier recombination time are the key factors responsible for its near-room-temperature operation. © 2001 American Institute of Physics.


Related Articles

  • Growth and characterization of InGaAs/InGaP quantum dots for midinfrared photoconductive detector. Kim, S.; Mohseni, H.; Erdtmann, M.; Michel, E.; Jelen, C.; Razeghi, M. // Applied Physics Letters;8/17/1998, Vol. 73 Issue 7 

    We report InGaAs quantum dot intersubband infrared photodetectors grown by low-pressure metalorganic chemical vapor deposition on semi-insulating GaAs substrates. The optimum growth conditions were studied to obtain uniform InGaAs quantum dots constructed in an InGaP matrix. Normal incidence...

  • Background limited mid-infrared photodetection with photovoltaic HgTe colloidal quantum dots. Guyot-Sionnest, Philippe; Roberts, John Andris // Applied Physics Letters;12/21/2015, Vol. 107 Issue 25, p1 

    The photovoltaic response of thin films of HgTe colloidalquantum dots in the 3-5μm range is observed. With no applied bias, internal quantum efficiency exceeding 40%, specific detectivity above 1010 Jones and microseconds response times are obtained at 140K. The cooled devicesdetect the...

  • Quantum cascade detectors for very long wave infrared detection. Buffaz, A.; Carras, M.; Doyennette, L.; Nedelcu, A.; Marcadet, X.; Berger, V. // Applied Physics Letters;4/26/2010, Vol. 96 Issue 17, p172101 

    A high responsivity GaAs/AlGaAs quantum cascade detector is demonstrated at a wavelength of 15 μm. The quantum design is optimized for negative bias operation, so that the capture of photoexcited electrons back to the fundamental level is minimized. The detectivity of the detector presented...

  • Origin of photocurrent in lateral quantum dots-in-a-well infrared photodetectors. Höglund, L.; Asplund, C.; Wang, Q.; Almqvist, S.; Malm, H.; Petrini, E.; Andersson, J. Y.; Holtz, P. O.; Pettersson, H. // Applied Physics Letters;5/22/2006, Vol. 88 Issue 21, p213510 

    Interband and intersubband transitions of lateral InAs/In0.15Ga0.85As dots-in-a-well quantum dot infrared photodetectors were studied in order to determine the origin of the photocurrent. The main intersubband transition contributing to the photocurrent (PC) was associated with the quantum dot...

  • Bound-to-continuum intersubband photoconductivity of self-assembled InAs quantum dots in... Lee, S.-W; Hirakawa, K.; Shimada, Y. // Applied Physics Letters;9/6/1999, Vol. 75 Issue 10, p1428 

    Reports on the design and fabrication of a quantum dot infrared photodetector which uses the lateral transport of photoexcited carriers in the modulation-doped AlGaAs/GaAs channels. Photocurrent signal observed; Peak responsivity.

  • Physical model and analysis of quantum dot infrared photodetectors with blocking layer. Ryzhii, V. // Journal of Applied Physics;5/1/2001, Vol. 89 Issue 9, p5117 

    A device model for quantum dot infrared photodetectors (QDIPs) with the blocking layer (BL) between quantum dots is presented. Explicit analytical formulas for the dark current and the responsivity in the QDIP of this type are obtained as functions of device parameters, including the doping...

  • Voltage-controllable multiwavelength InAs quantum-dot infrared photodetectors for mid- and far-infrared detection. Ye, Zhengmao; Campbell, Joe C.; Chen, Zhonghui; Kim, Eui-Tae; Madhukar, Anupam // Journal of Applied Physics;10/1/2002, Vol. 92 Issue 7, p4141 

    We report a bias-controllable multiwavelength quantum dot infrared photodetector (QDIP). The active region of the QDIP consisted of five layers of InAs quantum dots with InGaAs cap layers. Photoresponse peaks at 5.5, 5.9, 8.9, and 10.3-10.9 µm were observed. The relative response of these...

  • Characteristics of InGaAs quantum dot infrared photodetectors. Xu, S. J.; Chua, S. J.; Mei, T.; Wang, X. C.; Zhang, X. H.; Karunasiri, G.; Fan, W. J.; Wang, C. H.; Jiang, J.; Wang, S.; Xie, X. G. // Applied Physics Letters;11/23/1998, Vol. 73 Issue 21 

    A quantum dot infrared photodetector (QDIP) consisting of self-assembled InGaAs quantum dots has been demonstrated. Responsivity of 3.25 mA/W at 9.2 μm was obtained for nonpolarized incident light on the detector with a 45° angle facet at 60 K. The QDIPs exhibit some unique electro-optic...

  • Quantum-dot infrared photodetector with lateral carrier transport. Chu, L.; Zrenner, A.; Bichler, M.; Abstreiter, G. // Applied Physics Letters;10/1/2001, Vol. 79 Issue 14, p2249 

    In this letter, we present a normal-incident quantum-dot infrared photodetector. The detection principle is based on intersubband transition between the p states and the wetting-layer subband in the conduction band of self-assembled In(Ga)As/GaAs quantum dots. Carrier transport takes place in a...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics