TITLE

Diamond-like carbon films as electron-injection layer in organic light emitting diodes

AUTHOR(S)
Lmimouni, K.; Legrand, C.; Dufour, C.; Chapoton, A.; Belouet, C.
PUB. DATE
April 2001
SOURCE
Applied Physics Letters;4/23/2001, Vol. 78 Issue 17, p2437
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
In this letter a thin film of diamond-like carbon (DLC) deposited by pulse laser deposition (PLD) is used as an electron injection layer in organic light emitting diodes. The heterojunction structures of these devices consist of: indium tin oxide (ITO)/conducting polymer/DLC/nickel, or ITO/DLC/P3OT/Pt. Poly(3-octylthiophene) conjugated polymer (P3OT) is used as the emission layer. In all the realized diodes, the current is two orders of magnitude larger than in the conventional ITO/P3OT/aluminum structure, and the driving voltage is drastically reduced. However, the light emission is observed only in the ITO/DLC/P3OT/Pt structure. These results can be interpreted in terms of a highly efficient electron injection from the DLC into the conducting polymer and a DLC/P3OT interface. © 2001 American Institute of Physics.
ACCESSION #
4711042

 

Related Articles

  • Indium tin oxide thin films grown on flexible plastic substrates by pulsed-laser deposition for organic light-emitting diodes. Kim, H.; Horwitz, J. S.; Kushto, G. P.; Kafafi, Z. H.; Chrisey, D. B. // Applied Physics Letters;7/16/2001, Vol. 79 Issue 3 

    Transparent conducting indium tin oxide (ITO) thin films were grown by pulsed laser deposition (PLD) on flexible polyethylene terephthalate (PET) substrates. The structural, electrical, and optical properties of these films were investigated as a function of substrate deposition temperature and...

  • Defects and transport in complex oxide thin films. Ohnishi, Tsuyoshi; Shibuya, Keisuke; Yamamoto, Takahisa; Lippmaa, Mikk // Journal of Applied Physics;May2008, Vol. 103 Issue 10, p103703 

    Epitaxial oxide thin films are at the heart of new “oxide electronic” applications, such as excitonic ultraviolet light-emitting diodes and resistive switching memories. Complex oxide films are often grown by pulsed laser deposition (PLD) because the technique is believed to be...

  • Waveguiding-assisted random lasing in epitaxial ZnO thin film. Dupont, P.-H.; Couteau, C.; Rogers, D. J.; Hosseini Téhérani, F.; Lérondel, G. // Applied Physics Letters;12/27/2010, Vol. 97 Issue 26, p261109 

    Zinc oxide thin films were grown on c-sapphire substrates using pulsed laser deposition. Pump power dependence of surface emission spectra, acquired using a quadrupled 266 nm laser, revealed room temperature stimulated emission (threshold of 900 kW/cm2). Time dependent spectral analysis plus...

  • Fabrication of Zr–N codoped p-type ZnO thin films by pulsed laser deposition. Kim, H.; Cepler, A.; Osofsky, M. S.; Auyeung, R. C. Y.; Piqué, A. // Applied Physics Letters;5/14/2007, Vol. 90 Issue 20, p203508 

    N-doped and Zr–N codoped p-type ZnO films were grown on sapphire substrates by pulsed laser deposition. The carrier type and conduction are very sensitive to N2O deposition pressure. p-type conduction is observed only for films grown at an intermediate pressure range...

  • Evidence for the existence of a metal-insulator-semiconductor junction at the electrode interfaces of CaCu3Ti4O12 thin film capacitors. Deng, Guochu; Yamada, Tomoaki; Muralt, Paul // Applied Physics Letters;11/12/2007, Vol. 91 Issue 20, p202903 

    P-type conductivity has been observed in CaCu3Ti4O12 (CCTO) ceramics and also in thin films deposited by pulsed laser deposition. I-V and C-V relationships of the CCTO thin films showed characteristics typical of a tunnel metal-insulator-semiconductor structure, evidencing its capacitance...

  • Fabrication and Electrical Properties of Transparent n-ZnO:Al-p-NiO:Li Junction. Mistry, Jaydip; Mistry, B. V.; Trivedi, U. N.; Pinto, R.; Joshi, U. S. // AIP Conference Proceedings;7/16/2011, Vol. 1349 Issue 1, p725 

    Transparent all oxide p-n junction thin film diode nanostructures consisting of n-type ZnO:Al and p-type NiO was fabricated by pulsed laser deposition onto c-sapphire substrate. Details of device fabrication will be presented. Combined GIXRD and AFM results confirm phase pure, mono-dispersed 30...

  • A reciprocity theorem for charge collection. Donolato, C. // Applied Physics Letters;2/1/1985, Vol. 46 Issue 3, p270 

    It is shown that the current collected by a p-n junction in presence of a unit point generation of carriers at a point P is the same (apart from the dimensions) as the excess minority-carrier density at P due to a unit density of carriers at the junction edge. Use of this reciprocity relation...

  • Visible-wavelength surface-emitting devices with a 15-fold improvement in electrical-to-optical.... Thomas, K.J.; Guido, L.J. // Applied Physics Letters;1/9/1995, Vol. 66 Issue 2, p127 

    Presents a fabricated Al[sub x]Ga[sub 1-x]As p-n junction light emitting diodes. Improvement of electro-to-optical power conversion efficiency; Reduction in active region heating; Result of current spreading calculations.

  • Indium-free transparent organic light emitting diodes with Al doped ZnO electrodes grown by atomic layer and pulsed laser deposition. Meyer, J.; G#x00F6;rrn, P.; Hamwi, S.; Johannes, H.-H.; Riedl, T.; Kowalsky, W. // Applied Physics Letters;8/18/2008, Vol. 93 Issue 7, p073308 

    We present highly efficient transparent organic light emitting diodes (OLEDs) with Al doped ZnO (AZO) electrodes prepared by atomic layer deposition and pulsed laser deposition (PLD). The power and current efficiencies exceed 27 lm/W and 44 cd/A at a brightness level of 100 cd/m2, respectively....

Share

Read the Article

Courtesy of VIRGINIA BEACH PUBLIC LIBRARY AND SYSTEM

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics