Stoichiometry-induced roughness on antimonide growth surfaces

Bracker, A. S.; Nosho, B. Z.; Barvosa-Carter, W.; Whitman, L. J.; Bennett, B. R.; Shanabrook, B. V.; Culbertson, J. C.
April 2001
Applied Physics Letters;4/23/2001, Vol. 78 Issue 17, p2440
Academic Journal
Phase shifts in the intensity oscillation of reflection high-energy electron diffraction spots provide evidence for monolayer island formation on AlSb that is caused by sudden changes in surface stoichiometry. High-resolution scanning tunneling microscopy confirms the interpretation of the phase shift. These results are consistent with a previous structural assignment of the AlSb β(4x3) and α(4x3) surface reconstructions and provide guidelines for producing smooth interfaces in antimonide-based heterostructures.


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