Stability of zirconium silicate films on Si under vacuum and O[sub 2] annealing

Morais, J.; da Rosa, E. B. O.; Miotti, L.; Pezzi, R. P.; Baumvol, I. J. R.; Rotondaro, A. L. P.; Bevan, M. J.; Colombo, L.
April 2001
Applied Physics Letters;4/23/2001, Vol. 78 Issue 17, p2446
Academic Journal
The effect of postdeposition annealing in vacuum and in dry O[sub 2] on the atomic transport and chemical stability of chemical vapor deposited ZrSi[sub x]O[sub y] films on Si is investigated. Rutherford backscattering spectrometry, narrow nuclear resonance profiling, and low energy ion scattering spectroscopy were used to obtain depth distributions of Si, O, and Zr in the films. The chemical environment of these elements in near-surface and near-interface regions was identified by angle-resolved x-ray photoelectron spectroscopy. It is shown that although the interface region is rather stable, the surface region presents an accumulation of Si after thermal annealing. © 2001 American Institute of Physics.


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