Fluorescence x-ray absorption fine structure study on local structures around Fe atoms heavily doped in GaN by low-temperature molecular-beam epitaxy

Ofuchi, H.; Oshima, M.; Tabuchi, M.; Takeda, Y.; Akinaga, H.; Németh, S.; De Boeck, J.; Borghs, G.
April 2001
Applied Physics Letters;4/23/2001, Vol. 78 Issue 17, p2470
Academic Journal
A local structural transition in heavily Fe-doped GaN films related to the magnetic properties has been revealed by fluorescence x-ray absorption fine structure (XAFS) analysis. The structural transition is explained (or considered to be induced) by the change in the degree of hybridization between Fe 3d and N 2p states, which can be evaluated by x-ray absorption near edge structure spectra. The XAFS analysis indicates that the present diluted magnetic semiconductor based on GaN can be fabricated by electron cyclotron resonance microwave plasma-assisted low-temperature molecular-beam epitaxy. © 2001 American Institute of Physics.


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