On the nature of the D[sub 1]-defect center in SiC: A photoluminescence study of layers grown by solid-source molecular-beam epitaxy

Fissel, A.; Richter, W.; Furthmu¨ller, J.; Bechstedt, F.
April 2001
Applied Physics Letters;4/23/2001, Vol. 78 Issue 17, p2512
Academic Journal
Undoped and boron-doped SiC layers are grown on hexagonal SiC(0001) substrates by means of solid-source molecular-beam epitaxy. Hexagonal 4H- and 6H-SiC layers are grown homoepitaxially via step-controlled epitaxy, whereas the cubic 3C-SiC is grown pseudomorphically via nucleation and subsequent step flow. The low-temperature photoluminescence spectra only show the well-known emission lines of the so-called D[sub 1] center. The line positions are compared with results of first-principles calculations. The growth conditions, the line shape, and the line shift with the polytype support an interpretation as bound-exciton recombination at a native-defect complex that contains a Si vacancy. © 2001 American Institute of Physics.


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