Low-frequency photocurrent noise in semiconductors: Effect of nonlinear current-voltage characteristics

Carbone, Anna; Mazzetti, Piero; Rossi, Fausto
April 2001
Applied Physics Letters;4/23/2001, Vol. 78 Issue 17, p2518
Academic Journal
A current noise model for planar metal-semiconductor-metal photodetectors is proposed, which allows one to account for the low-frequency excess-noise behavior measured in several semiconductor devices. According to the proposed model--based on a multiplicative noise mechanism--the photocurrent noise power can be directly related to the carrier density and to the photogeneration level. Moreover, in the absence of potential-barrier fluctuations, the standard 1/n behavior of the simple g-r noise model is recovered. © 2001 American Institute of Physics.


Related Articles

  • 2.5 Gbit/s polycrystalline germanium-on-silicon photodetector operating from 1.3 to 1.55 μm. Masini, Gianlorenzo; Colace, Lorenzo; Assanto, Gaetano // Applied Physics Letters;4/14/2003, Vol. 82 Issue 15, p2524 

    We report on a fast polycrystalline germanium-on-silicon heterojunction photodetector for the near-infrared. The device exhibits a pulse response faster than 200 ps, allowing operation at 2.5 Gbit/s as testified by open eye diagrams. This polycrystalline device, with responsivities of 16 and 5...

  • Technique for integration of vertical cavity lasers and resonant photodetectors. Sjo¨lund, O.; Louderback, D. A.; Hegblom, E. R.; Ko, J.; Coldren, L. A. // Applied Physics Letters;7/6/1998, Vol. 73 Issue 1 

    We demonstrate a design that allows fabrication of substrate input/output resonant-cavity photodetectors and vertical cavity lasers (VCLs) on the same substrate without regrowth. By selectively oxidizing a few layers in the bottom mirror the as-grown 80% reflectivity mirror, used as the input...

  • Hole dominated transport in InGaAs metal semiconductor metal photodetectors. Hargis, Marian; Ralph, Stephen E. // Applied Physics Letters;7/17/1995, Vol. 67 Issue 3, p413 

    Measures the intrinsic photocurrent response of top and black illuminated planar metal-semiconductor-metal structures. Observance of the temporal dynamics of hole transport dependence on applied bias; Factors in understanding the increased hole transit time of black illuminated structures;...

  • Vertical forward coupler based channel-dropping photodetector. Sakata, Hajime; Kawasaki, Hideshi // Applied Physics Letters;3/7/1994, Vol. 64 Issue 10, p1201 

    Demonstrates the basic principles of the integrated channel-dropping photodetector used in III-IV semiconductors. Effect of the integrated photodetector on the overall quantum efficiency; Result of the photocurrent spectra for various grating periods; Use of a grating-coupled gallium...

  • Innovative photoreceivers simplify measurements. Hultgren, Charlie // Laser Focus World;Sep98, Vol. 34 Issue 9, p123 

    Outlines the use of semiconductor photodiodes combined with analog circuitry in optical detection applications such as atmospheric, biological and spectroscopic studies. Application of balanced photoreceiver in sensitive measurements; Measurement of atmospheric potassium; Role of femtowatt...

  • Two-dimensional numerical simulation of the pulse response of a semi-insulating InGaAs:Fe photodetector. Hurd, C. M.; McKinnon, W. R. // Journal of Applied Physics;11/1/1995, Vol. 78 Issue 9, p5756 

    Presents a study that described a calculation of the transient pulse response of a planar metal-semiconductor-metal photodetector consisting of Schottky contacts made to an active layer of semi-insulating InGaAs:Fe that is supported on an InP:Fe substrate. Simulation details; Impulse response...

  • High-speed multiplication-type photodetecting device using organic codeposited films. Matsunobu, Goh; Oishi, Yuko; Yokoyama, Masaaki; Hiramoto, Masahiro // Applied Physics Letters;8/12/2002, Vol. 81 Issue 7, p1321 

    High-speed photocurrent multiplication devices using codeposited films of copper phthalocyanine and fullerene were fabricated. The photoresponse time for the light-on and -off reached 3 and 15 ms, respectively, which were in striking contrast to those for single fullerene films requiring several...

  • Strained InGaAs/AlGaAs quantum well infrared detectors at 4.5 mum. Fiore, A.; Rosencher, E.; Bois, P.; Nagle, J.; Laurent, N. // Applied Physics Letters;1/24/1994, Vol. 64 Issue 4, p478 

    Demonstrates midinfrared photodetection at delta=4.5 micrometer in multi-quantum well detector using strained GaAs compound alloy grown on GaAs substrate. Presentation of a very low dark current; Period of the structure by x-ray diffraction measurement; Performance on gallium arsenide-based...

  • Photodetector for microwave signals based on the synchronous drift of photogenerated carriers.... Dolfi, D.; Merlet, Th. // Applied Physics Letters;12/5/1994, Vol. 65 Issue 23, p2931 

    Presents the principle of a photodetector based on the synchronous drift in a semiconductor of photogenerated carriers with a moving interference pattern. Provision of a large detection volume; Demonstration of the principle in gallium arsenide layer; Study on the evolution of the detected signal.


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics