TITLE

Switching behavior of semiconducting carbon nanotubes under an external electric field

AUTHOR(S)
Rochefort, Alain; Di Ventra, Massimiliano; Avouris, Phaedon
PUB. DATE
April 2001
SOURCE
Applied Physics Letters;4/23/2001, Vol. 78 Issue 17, p2521
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
We investigate theoretically the switching characteristics of semiconducting carbon nanotubes connected to gold electrodes under an external (gate) electric field. We find that the external introduction of holes is necessary to account for the experimental observations. We identify metal-induced gap states (MIGS) at the contacts and find that the MIGS of an undoped tube would not significantly affect the switching behavior, even for very short tube lengths. We also explore the miniaturization limits of nanotube transistors, and, on the basis of their switching ratio, we conclude that transistors with channels as short as 50 Å would have adequate switching characteristics. © 2001 American Institute of Physics.
ACCESSION #
4711013

 

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