TITLE

Intrinsic exchange biasing in MnAs epilayers grown on (001) GaAs

AUTHOR(S)
Chun, S. H.; Potashnik, S. J.; Ku, K. C.; Berry, J. J.; Schiffer, P.; Samarth, N.
PUB. DATE
April 2001
SOURCE
Applied Physics Letters;4/23/2001, Vol. 78 Issue 17, p2530
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
We have studied the magnetic properties of MnAs epilayers grown in two preferred orientations on (001) GaAs by molecular-beam epitaxy. Samples with the (1¯100) MnAs parallel to (001) GaAs ("type A") show asymmetric hysteresis loops and an anomalous temperature dependence of the coercive field. We attribute these anomalies to intrinsic exchange biasing effects arising from the presence of a strain-induced antiferromagnetic β-MnAs phase that coexists with the ferromagnetic α-MnAs phase. These unusual effects vanish with decreasing sample thickness, suggesting a strategy for suppressing the antiferromagnetic β-MnAs phase. © 2001 American Institute of Physics.
ACCESSION #
4711009

 

Related Articles

  • Nd[sup 3+] incorporation in CaF[sub 2] layers grown by molecular beam epitaxy. Bausa, L.E.; Legros, R.; Munoz-Yague, A. // Applied Physics Letters;7/8/1991, Vol. 59 Issue 2, p152 

    Examines the growth of monocrystalline layers of Nd[sup 3+]-doped CaF[sub 2] on (100)CaF[sub 2] substrates by molecular beam epitaxy. Concentration of Nd in CaF[sub 2] films; Evaporation of CaF[sub 2] using a standard effusion cell equipped with a boron nitride crucible; Generation of the...

  • Molecular beam epitaxial growth and luminescence of InxGa1-xAs/InxAl1-xAs multiquantum wells on GaAs. Chang, Kevin H.; Berger, Paul R.; Singh, Jasprit; Bhattacharya, Pallab K. // Applied Physics Letters;7/27/1987, Vol. 51 Issue 4, p261 

    This letter reports the successful molecular beam epitaxial growth of high-quality InxGa1-xAs/InxAl1-xAs directly on GaAs. In situ observation of dynamic high-energy electron diffraction oscillations during growth of InxGa1-xAs on GaAs indicates that the average cation migration rates are...

  • Ethyliodide n-type doping of Hg[sub 1-x]Cd[sub x]Te (x=0.24) grown by metalorganic molecular.... Benz II, R.G.; Conte-Matos, A. // Applied Physics Letters;11/28/1994, Vol. 65 Issue 22, p2836 

    Examines the growth of conductive n-type Hg[sub 1-x]cs[sub x]Te epitaxial layers by molecular beam epitaxy using iodine doping. Selection of ethyliodide as the dopant precursor; Increase in the low temperature electron concentration; Indication of electrical activity in the high electron...

  • Growth and optical characterization of InAs1-xSbx(0≤x≤1) on GaAs and on GaAs-coated Si by molecular beam epitaxy. Dobbelaere, W.; De Boeck, J.; Borghs, G. // Applied Physics Letters;10/30/1989, Vol. 55 Issue 18, p1856 

    Epitaxial layers of InAs1-xSbx(0≤x≤1) have been grown on GaAs and on GaAs-coated Si substrates by molecular beam epitaxy using tetrameric Sb and dimeric As sources. Room-temperature transmission spectroscopy was used to measure the optical band gap of the InAs1-xSbx layers and the...

  • Growth of single crystal bcc α-Fe on ZnSe via molecular beam epitaxy. Prinz, G. A.; Jonker, B. T.; Krebs, J. J.; Ferrari, J. M.; Kovanic, F. // Applied Physics Letters;6/23/1986, Vol. 48 Issue 25, p1756 

    Molecular beam epitaxy methods have been used to grow high quality single crystal films of bcc α-Fe on fcc (zinc blende) ZnSe (001) epilayers on GaAs (001). These films were characterized by reflection high-energy electron diffraction, Auger electron spectroscopy, ferromagnetic resonance...

  • Critical thickness in epitaxial CdTe/ZnTe. Cibert, J.; Gobil, Y.; Dang, Le Si; Tatarenko, S.; Feuillet, G.; Jouneau, P. H.; Saminadayar, K. // Applied Physics Letters;1/15/1990, Vol. 56 Issue 3, p292 

    The critical thickness for coherent growth of CdTe on ZnTe by molecular beam epitaxy is assessed by reflection high-energy electron diffraction, low-temperature photoluminescence, and transmission electron microscopy. The value is found to be 5 monolayers for this high mismatch system (6%). As...

  • Gas source iodine n-type doping of molecular beam epitaxially grown CdTe. Rajavel, D.; Summers, C.J. // Applied Physics Letters;5/4/1992, Vol. 60 Issue 18, p2231 

    Examines the growth of highly conductive n-type cadmium telluride films through molecular beam epitaxy by iodine doping using ethyliodide. Increase of room-temperature electron concentration for dopant flow rate; Determination of the structural and optical properties by x-ray double crystal...

  • Observation of reflection high energy electron diffraction intensity oscillations during Si.... Mokler, S.M.; Liu, W.K. // Applied Physics Letters;5/4/1992, Vol. 60 Issue 18, p2255 

    Examines the growth of silicon(001) during gas source molecular beam epitaxy from disilane using reflection electron diffraction intensity oscillations. Factor affecting the performance of oscillations; Observation of strong and damped oscillations under two dimensional growth regime;...

  • Epitaxial growth and surface structure of (0001) Be on (111) Si. Ruffner, Judith A.; Slaughter, J.M.; Eickmann, James; Falco, Charles M. // Applied Physics Letters;1/3/1994, Vol. 64 Issue 1, p31 

    Examines the growth of epitaxial single-crystal (0001) beryllium (Be) on (111) silicon substrates using molecular beam epitaxy. Improvement of crystalline quality with increasing deposition temperature; Surface structure of Be; Deposition of Be from a Knudsen cell.

  • Molecular beam epitaxy of Nd-doped CaF2 and CaSrF2 layers on Si and GaAs substrates. Bausá, L. E.; Fontaine, C.; Daran, E.; Muñoz-Yagüe, A. // Journal of Applied Physics;7/15/1992, Vol. 72 Issue 2, p499 

    Presents information on a study which investigated the growth of monocrystalline neodymium-doped layers by molecular beam epitaxy on silicon and gallium arsenide substrates. Experimental procedure; Growth conditions; Results and discussion.

Share

Read the Article

Courtesy of THE LIBRARY OF VIRGINIA

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics