TITLE

Band gap engineering of amorphous silicon quantum dots for light-emitting diodes

AUTHOR(S)
Park, Nae-Man; Kim, Tae-Soo; Park, Seong-Ju
PUB. DATE
April 2001
SOURCE
Applied Physics Letters;4/23/2001, Vol. 78 Issue 17, p2575
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Amorphous silicon quantum dots (a-Si QDs), which show a quantum confinement effect were grown in a silicon nitride film by plasma-enhanced chemical vapor deposition. Red, green, blue, and white photoluminescence were observed from the a-Si QD structures by controlling the dot size. An orange light-emitting diode (LED) was fabricated using a-Si QDs with a mean size of 2.0 nm. The turn-on voltage was less than 5 V. An external quantum efficiency of 2x10[sup -3]% was also demonstrated. These results show that a LED using a-Si QDs embedded in the silicon nitride film is superior in terms of electrical and optical properties to other Si-based LEDs. © 2001 American Institute of Physics.
ACCESSION #
4710993

 

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