Proton irradiation of InAs/AlSb/GaSb resonant interband tunneling diodes

Magno, R.; Weaver, B. D.; Bracker, A. S.; Bennett, B. R.
April 2001
Applied Physics Letters;4/23/2001, Vol. 78 Issue 17, p2581
Academic Journal
Room temperature current-voltage measurements have been made on InAs/AlSb/GaSb resonant interband tunnel diodes irradiated with 2 MeV protons to determine the effect of displacement damage on the negative resistance peak current I[sub p] and the peak-to-valley current ratio P/V. Diodes with 5 and 13 ML AlSb barrier thickness were irradiated and measured several times until the total fluences reached 1x10[sup 15] and 2x10[sup 14] H[sup +]/cm[sup 2], respectively. The current due to radiation-induced defects has a nonlinear voltage dependence, with a large increase occurring in the voltage range between the negative resistance peak and the valley. I[sub p] increased <50% while a large increase in the valley current decreased the P/V ratios to about 2. © 2001 American Institute of Physics.


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