TITLE

Terahertz detection by high-electron-mobility transistor: Enhancement by drain bias

AUTHOR(S)
Lu¨, Jian-Qiang; Shur, Michael S.
PUB. DATE
April 2001
SOURCE
Applied Physics Letters;4/23/2001, Vol. 78 Issue 17, p2587
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
We report on a regime of operation of high-electron-mobility-transistor (HEMT) terahertz detectors, in which we apply a constant drain bias. The drain bias dependence of the gate-to-source and gate-to-drain capacitances results in a much greater asymmetry in the boundary conditions for plasma waves and greatly enhances the HEMT detector responsivity. The measured responsivity increases with the drain current by more than an order of magnitude and saturates at a saturation drain current for a given gate bias. These results confirm our model linking the responsivity increase to the drain bias dependence of the HEMT capacitances. © 2001 American Institute of Physics.
ACCESSION #
4710989

 

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