Terahertz detection by high-electron-mobility transistor: Enhancement by drain bias

Lu¨, Jian-Qiang; Shur, Michael S.
April 2001
Applied Physics Letters;4/23/2001, Vol. 78 Issue 17, p2587
Academic Journal
We report on a regime of operation of high-electron-mobility-transistor (HEMT) terahertz detectors, in which we apply a constant drain bias. The drain bias dependence of the gate-to-source and gate-to-drain capacitances results in a much greater asymmetry in the boundary conditions for plasma waves and greatly enhances the HEMT detector responsivity. The measured responsivity increases with the drain current by more than an order of magnitude and saturates at a saturation drain current for a given gate bias. These results confirm our model linking the responsivity increase to the drain bias dependence of the HEMT capacitances. © 2001 American Institute of Physics.


Related Articles

  • Estimation of the interface states density of a Si/C[sub 60] heterojunction by frequency-dependent capacitance–voltage characteristics. Kita, K.; Ihara, M.; Sakaki, K.; Yamada, K. // Journal of Applied Physics;5/1/1997, Vol. 81 Issue 9, p6246 

    Capacitance-voltage (C-V) characteristics of a Si/C&sub60; heterojunction, i.e., a HF solution (7.3% HF+30% NH[sub 4]F) treated Si surface interfaced solid crystal of C&sub60; molecules, were measured while applying various ac frequencies. The entire C[sub 60] thin film and near-interface region...

  • Ionization Readout of CDMS Detectors with Low Power, Low Noise HEMTs. Phipps, A.; Jin, Y.; Sadoulet, B. // Journal of Low Temperature Physics;Aug2014, Vol. 176 Issue 3/4, p470 

    We have measured the ionization performance of a CDMS II detector using CNRS/LPN HEMTs as opposed to Si JFETs in the front end electronics. We find no significant difference in ionization resolution when using HEMTs compared to Si JFETs indicating the CNRS/LPN HEMTs can act as a low power, low...

  • Detection of halide ions with AlGaN/GaN high electron mobility transistors. Kang, B. S.; Ren, F.; Kang, M. C.; Lofton, C.; Tan, Weihong; Pearton, S. J.; Dabiran, A.; Osinsky, A.; Chow, P. P. // Applied Physics Letters;4/25/2005, Vol. 86 Issue 17, p173502 

    AlGaN/GaN high electron mobility transistors (HEMTs) both with and without a Au gate are found to exhibit significant changes in channel conductance upon exposing the gate region to various halide ions. The polar nature of the halide ions leads to a change of surface charge in the gate region on...

  • Resonant detection of modulated terahertz radiation in micromachined high-electron-mobility transistor. Ryzhii, V.; Ryzhii, M.; Hu, Y.; Hagiwara, I.; Shur, M. S. // Applied Physics Letters;5/14/2007, Vol. 90 Issue 20, p203503 

    The authors develop a device model for a resonant detector of modulated terahertz radiation based on a micromachined high-electron-mobility transistor with the microcantilever serving as the gate. The device model accounts for mechanical motion of the microcantilever and plasma effects of the...

  • Fast electrical detection of Hg(II) ions with AlGaN/GaN high electron mobility transistors. Wang, Hung-Ta; Kang, B. S.; Chancellor, T. F.; Lele, T. P.; Tseng, Y.; Ren, F.; Pearton, S. J.; Johnson, W. J.; Rajagopal, P.; Roberts, J. C.; Piner, E. L.; Linthicum, K. J. // Applied Physics Letters;7/23/2007, Vol. 91 Issue 4, p042114 

    Bare Au gated and thioglycolic acid functionalized Au-gated AlGaN/GaN high electron mobility transistors (HEMTs) were used to detect mercury (II) ions. Fast detection of less than 5 s was achieved for thioglycolic acid functionalized sensors. This is the shortest response time ever reported for...

  • Ambipolar organic field-effect transistors with air stability, high mobility, and balanced transport. Haibo Wang; Jun Wang; Xuanjun Yan; Jianwu Shi; Hongkun Tian; Yanhou Geng; Donghang Yan // Applied Physics Letters;3/27/2006, Vol. 88 Issue 13, p133508 

    Ambipolar organic field-effect transistors (OFETs) based on the organic heterojunction of copper-hexadecafluoro-phthalocyanine (F16CuPc) and 2,5-bis(4-biphenylyl) bithiophene (BP2T) were fabricated. The ambipolar OFETs eliminated the injection barrier for the electrons and holes though...

  • Open-Gate Liquid-Phase Sensor Fabricated on Undoped-AlGaN/GaN HEMT Structure. Abidin, M. S. Z.; Sharifabad, M. E.; Rahman, S. F. A.; Mustafa, F.; Hashim, A. M.; Rahman, A. R. A.; Qindeel, R.; Omar, N. A. // Journal of Applied Sciences;2010, Vol. 10 Issue 18, p2078 

    No abstract available.

  • A Fano-type interference enhanced quantum dot infrared photodetector. Vasinajindakaw, Puminun; Vaillancourt, Jarrod; Guiru Gu; Runyu Liu; Yunfeng Ling; Xuejun Lu // Applied Physics Letters;5/23/2011, Vol. 98 Issue 21, p211111 

    In this letter, we report a quantum dot photodetector enhanced by Fano-type interference in a metallic two-dimensional (2D) subwavelength hole array (2DSHA). The photocurrent enhancement wavelength shows an offset from the plasmonic resonant peak and corresponds to a dip in the transmission...

  • Role of Gate Oxide in AlGaN/GaN High-Electron-Mobility Transistor pH Sensors. Kang, B. S.; Wang, H. T.; Ren, F.; Hlad, M.; Gila, B. P.; Abernathy, C. R.; Pearton, S. J.; Li, C.; Low, Z. N.; Lin, J.; Johnson, J. W.; Rajagopal, P.; Roberts, J. C.; Piner, E. L.; Linthicum, K. J. // Journal of Electronic Materials;May2008, Vol. 37 Issue 5, p550 

    We report on a comparison of different gate oxides for AlGaN/GaN high-electron- mobility transistor (HEMT) pH sensors. The HEMTs show a linear increase in drain-source current as the pH of the electrolyte solutions introduced to the gate region is decreased. Three different gate oxides were...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics