Submilliwatt operation of AlGaN-based ultraviolet light-emitting diode using short-period alloy superlattice

Nishida, T.; Saito, H.; Kobayashi, N.
January 2001
Applied Physics Letters;1/22/2001, Vol. 78 Issue 4, p399
Academic Journal
Over 0.1 mW ultraviolet output was achieved by an AlGaN-based light-emitting diode. To realize a highly conductive and ultraviolet-transparent layer, a short-period alloy superlattice was introduced. The device was fabricated on SiC substrate. Low electric resistivity due to the short-period alloy superlattice and the high thermal conductivity of the SiC substrate enabled large current injection of up to 1.7 kA/cm[sup 2]. The emission was monochromatic band-edge emission about 350 nm in wavelength without significant D-A and/or deep emissions.


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