Silicon microdischarge devices having inverted pyramidal cathodes: Fabrication and performance of arrays

Park, S.-J.; Chen, J.; Liu, C.; Eden, J. G.
January 2001
Applied Physics Letters;1/22/2001, Vol. 78 Issue 4, p419
Academic Journal
Microdischarge devices having inverted, square pyramidal cathodes as small as 50 μm x 50 μm at the base and 35 μm in depth, have been fabricated in silicon and operated at gas pressures up to 1200 Torr. For the polyimide dielectric incorporated into these devices (ε[sub r]=2.9), the discharges produced exhibit high differential resistance (∼2 x 10[sup 8] Ω in Ne), ignition voltages for a single device of ∼260-290 V, and currents typically in the μA range. Arrays as large as 10 x 10 have been fabricated. For an 8 μm thick polyimide dielectric layer, operating voltages as low as 200 V for a 5 x 5 array have been measured for 700 Torr of Ne. Array lifetimes are presently limited to several hours by the thin (1200-2000 Å) Ni anode.


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