In situ observation of surface processes in InAs/GaAs(001) heteroepitaxy: The role of As on the growth mode

Ohtake, Akihiro; Ozeki, Masashi
January 2001
Applied Physics Letters;1/22/2001, Vol. 78 Issue 4, p431
Academic Journal
Surface processes of the growing thin films of InAs on GaAs(001) substrates have been studied as a function of substrate temperature and As to In flux ratio. They have been observed by reflection high-energy electron diffraction and total-reflection-angle x-ray spectroscopy in real time. At temperatures lower than ∼480 °C, InAs grows in a Stranski-Krastanov mode irrespective of the As/In flux ratio, while the growth mode of InAs strongly depends on the flux ratio above ∼500 °C. We have found that the sticking probability of In decreases as the As flux is decreased above ∼500 °C, which results in the changes in the growth mode of InAs.


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