Excitonic properties and band alignment in lattice-matched ZnCdSe/ZnMgSe multiple-quantum-well structures

Bonanni, B.; Pelucchi, E.; Rubini, S.; Orani, D.; Franciosi, A.; Garulli, A.; Parisini, A.
January 2001
Applied Physics Letters;1/22/2001, Vol. 78 Issue 4, p434
Academic Journal
Lattice-matched Zn[sub 0.85]Cd[sub 0.15]Se/Zn[sub 0.74]Mg[sub 0.26]Se multiple-quantum-well structures were obtained on GaAs(001) using graded-composition In[sub y]Ga[sub 1-y]As layers to match the II-VI lattice parameter to the III-V substrate. Cross-sectional transmission electron microscopy studies show that the effect of the crosshatch pattern of the In[sub y]Ga[sub 1-y]As surface is limited to long-period coherent undulations of quantum well and barrier layers. Optical measurements of the excitonic properties as a function of well thickness, complemented by self-consistent calculations of the transition energies, indicate good quantum confinement in the well, with a 68% conduction band contribution to the 0.482 eV band gap difference.


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