X-ray scattering from misfit dislocations in heteroepitaxial films: The case of Nb(110) on Al[sub 2]O[sub 3]

Barabash, R. I.; Donner, W.; Dosch, H.
January 2001
Applied Physics Letters;1/22/2001, Vol. 78 Issue 4, p443
Academic Journal
We apply the Krivoglaz theory of x-ray scattering to thin epitaxial films containing misfit dislocations and reanalyze the seemingly puzzling x-ray scattering phenomena observed in several heteroepitaxial films. We show that the two-line shape scattering distribution and its dependence upon film thickness and momentum transfer can be understood in natural way and on a quantitative level. Extended diffuse x-ray scattering maps have been obtained from Nb(110)/Al[sub 2]O[sub 3](112¯0) which are discussed within the framework of this theory disclose a particular dislocation network at the Nb-Al[sub 2]O[sub 3] interface.


Related Articles

  • Diffuse x-ray scattering from misfit dislocations in SiGe epitaxial layers with graded Ge content. Holý, V.; Li, J. H.; Bauer, G.; Schäffler, F.; Herzog, H.-J. // Journal of Applied Physics;10/15/1995, Vol. 78 Issue 8, p5013 

    Presents information on a study wherein a theory describing x-ray diffuse scattering from misfit dislocations in epitaxial layers was developed. Methods; Results; Discussion.

  • X-ray scattering study of lattice relaxation in ErAs epitaxial layers on GaAs. Miceli, P.F.; Palmstrom, C.J.; Moyers, K.W. // Applied Physics Letters;4/15/1991, Vol. 58 Issue 15, p1602 

    Evaluates the results of a high-resolution x-ray scattering study of the lattice relaxation in [001]ErAs epitaxial layers grown on [001]GaAs. ErAs film thickness dependence and lattice parameters; tetragonal distortion of the unit cell; Interference oscillations from the Bragg reflectivity.

  • Topographic study on an InAs lattice-mismatched heteroepitaxial layer grown on GaAs by means of x-ray scattering radiography. Suzuki, Yoshifumi; Chikaura, Yoshinori; Akazaki, Tatsushi // Applied Physics Letters;5/7/1990, Vol. 56 Issue 19, p1856 

    X-ray scattering radiography has been successfully applied to an InAs lattice-mismatched heteroepitaxial layer grown on GaAs (001) by molecular beam epitaxy. It was found that the lattice of the epitaxial layer varied the orientation over 18 min in arc around a [100] direction, whereas the...

  • Structural properties of GaAs on (001) oriented Si and Ge substrates. Neumann, D. A.; Zabel, H.; Fischer, R.; Morkoç, H. // Journal of Applied Physics;2/1/1987, Vol. 61 Issue 3, p1023 

    Reports a detailed x-ray scattering study of gallium arsenide grown by molecular beam epitaxy on oriented silicon and germanium substrates. Analysis of the reciprocal space distribution of the scattered radiation; Experimental procedure considered in the study; Discussion of results.

  • In situ x-ray measurements of the initial epitaxy of Fe(001) films on MgO(001). Lairson, B. M.; Payne, A. P.; Brennan, S.; Rensing, N. M.; Daniels, B. J.; Clemens, B. M. // Journal of Applied Physics;10/1/1995, Vol. 78 Issue 7, p4449 

    Presents a study which measured small- and large-angle x-ray scattering from epitaxial iron (001) on a magnesium oxide (001) surface as a function of film thickness, using grazing incidence x-ray scattering. Details on strain relaxation subsequent to agglomeration; Description of epitaxial film...

  • Observation of growth modes during metal-organic chemical vapor deposition of GaN. Stephenson, G. B.; Eastman, J. A. // Applied Physics Letters;5/31/1999, Vol. 74 Issue 22, p3326 

    Discusses real-time surface x-ray scattering measurements during homoepitaxial growth of gallium nitride by metal-organic chemical vapor deposition. Intensity oscillations corresponding to the completion of each monolayer during layer-by-layer growth; Transitions between step-flow,...

  • X-ray scattering studies of FeSi2 films epitaxially grown on Si(111). Gay, J. M.; Stocker, P.; Réthoré, F. // Journal of Applied Physics;6/15/1993, Vol. 73 Issue 12, p8169 

    Presents an x-ray scattering study of FeSi[sub2] thin films epitaxially grown on silicon(111). Advantages in the use of x-rays compared to classical surface probes; Developments in the measurement of surface x-ray scattering; Information on the design of x-ray diffractometers.

  • High-resolution diffuse x-ray scattering from threading dislocations in heteroepitaxial layers. Daniš, S.; Holý, V.; Zhong, Z.; Bauer, G.; Ambacher, O. // Applied Physics Letters;10/11/2004, Vol. 85 Issue 15, p3065 

    Diffuse x-ray scattering from epitaxial layers with screw dislocations perpendicular to the surface is calculated assuming correlated dislocation positions. The resulting intensity distribution was compared with a reciprocal-space map measured in a symmetric diffraction from a hexagonal...

  • Grazing incidence x-ray scattering study of the structure of epitaxial Cr/Sn multilayers. Gupta, Ajay; Paul, Amitesh; Mukhopadhyay, Sanghamitra; Mibu, Ko // Journal of Applied Physics;8/1/2001, Vol. 90 Issue 3 

    The structure of epitaxial Cr/Sn multilayers has been studied experimentally using x-ray reflectivity and x-ray diffuse scattering measurements, as well as theoretically using linear muffin-tin orbital (LMTO) calculations. Measurements show a distinct variation in the structure of the...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics