TITLE

Compliant effect of low-temperature Si buffer for SiGe growth

AUTHOR(S)
Luo, Y. H.; Wan, J.; Forrest, R. L.; Liu, J. L.; Jin, G.; Goorsky, M. S.; Wang, K. L.
PUB. DATE
January 2001
SOURCE
Applied Physics Letters;1/22/2001, Vol. 78 Issue 4, p454
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Relaxed SiGe attracted much interest due to the applications for strained Si/SiGe high electron mobility transistor, metal-oxide-semiconductor field-effect transistor, heterojunction bipolar transistor, and other devices. High-quality relaxed SiGe templates, especially those with a low threading dislocation density and smooth surface, are critical for device performance. In this work, SiGe films on low-temperature Si buffer layers were grown by solid-source molecular-beam epitaxy and characterized by atomic force microscope, double-axis x-ray diffraction, and photoluminescence spectroscopy. It was demonstrated that, with the proper growth temperature and Si buffer thickness, the low-temperature Si buffer became tensily strained and reduced the lattice mismatch between the SiGe and the Si buffer layer. This performance is similar to that of the compliant substrate: a thin substrate that shares the mismatch strain in heteroepitaxy. Due to the smaller mismatch, misfit dislocation and threading dislocation densities were lower.
ACCESSION #
4710962

 

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