Large and abrupt optical band gap variation in In-doped ZnO

Kim, Kwang Joo; Park, Young Ran
January 2001
Applied Physics Letters;1/22/2001, Vol. 78 Issue 4, p475
Academic Journal
Optical absorption properties of n-type In-doped ZnO films were investigated by spectroscopic ellipsometry for varying carrier concentration. The fundamental optical band gap (E[sub 0]) edge of the compound showed a blueshift below the carrier concentration n[sub 0]=5x10[sup 19] cm[sup -3], which can be explained in terms of the Burstein-Moss band-filling effect. An abrupt jump of the E[sub 0] edge from blue- to redshift was observed as the carrier concentration increased beyond n[sub 0]. It is interpreted as due to a merging of the donor and conduction bands of the compound near n[sub 0]. The redshift increases quite linearly with the carrier concentration, reaching 600 meV for n=1.2x10[sup 20] cm[sup -3]. Such linear increase is interpreted as mainly due to a band gap narrowing caused by impurity-induced potential fluctuations.


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