TITLE

Comparison of field effect transistor characteristics between space-grown and earth-grown gallium arsenide single crystal substrates

AUTHOR(S)
Chen, Nuo Fu; Zhong, Xingru; Lin, Lanying; Zhang, Mian; Wang, Yunsheng; Bai, Xiwei; Zhao, Jing
PUB. DATE
January 2001
SOURCE
Applied Physics Letters;1/22/2001, Vol. 78 Issue 4, p478
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Semi-insulating gallium arsenide single crystal grown in space has been used in fabricating low noise field effect transistors and analog switch integrated circuits by the direct ion-implantation technique. All key electrical properties of these transistors and integrated circuits have surpassed those made from conventional earth-grown gallium arsenide. This result shows that device-grade space-grown semiconducting single crystal has surpassed the best terrestrial counterparts.
ACCESSION #
4710953

 

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