Interfacial capacitance effects in magnetic tunneling junctions

Landry, G.; Dong, Y.; Du, J.; Xiang, X.; Xiao, John Q.
January 2001
Applied Physics Letters;1/22/2001, Vol. 78 Issue 4, p501
Academic Journal
We have fabricated magnetic tunneling junctions by oxidizing a wedge-shaped aluminum layer to produce junctions with ideal oxidized as well as under and over oxidized junctions on a single wafer. By investigating the capacitance spectra, we are able to study the effects due to interface charge accumulation. The electron-electron interaction among accumulated interface charges leads to a voltage drop inside the magnetic electrodes, resulting in the measured capacitance differing from the geometric capacitance. We have extracted an interfacial capacitance of 16 μF/cm[sub 2] per interface and a screening length of 0.55 Å for FeNi electrodes.


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