TITLE

Control of magnetization reversal process by light illumination in ferromagnetic semiconductor heterostructure p-(In, Mn)As/GaSb

AUTHOR(S)
Oiwa, A.; Slupinski, T.; Munekata, H.
PUB. DATE
January 2001
SOURCE
Applied Physics Letters;1/22/2001, Vol. 78 Issue 4, p518
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
The reduction in coercive force by light illumination has been found in ferromagnetic semiconductor heterostructure p-(In, Mn)As/GaSb prepared by molecular-beam epitaxy. Enhanced ferromagnetic coupling between Mn ions, arising from excess photogenerated holes, reduces the domain wall energy and changes the magnetization hysteresis characteristics. The value of coercive force returns to the original value when excess holes recombine with trapped electrons.
ACCESSION #
4710939

 

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