TITLE

Effects of very thin strain layers on dielectric properties of epitaxial Ba[sub 0.6]Sr[sub 0.4]TiO[sub 3] films

AUTHOR(S)
Park, B. H.; Peterson, E. J.; Jia, Q. X.; Lee, J.; Zeng, X.; Si, W.; Xi, X. X.
PUB. DATE
January 2001
SOURCE
Applied Physics Letters;1/22/2001, Vol. 78 Issue 4, p533
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
We have epitaxially grown Ba[sub 0.6]Sr[sub 0.4]TiO[sub 3] (BST-0.4) thin films on MgO(001) substrates. By inserting a very thin Ba[sub 1-x]Sr[sub x]TiO[sub 3] (x=0.1-0.7) interlayer between the MgO substrate and the main layer of BST-0.4, we are able to manipulate the degree of the stress in BST-0.4 films. We have controlled the stress states, i.e., the lattice distortion ratio (D=in-plane lattice constant/out-of-plane lattice constant) of the BST-0.4 films by varying the chemical composition of the interlayers. We have found that small variations of D value can result in significantly large changes of dielectric properties. A BST-0.4 film under small tensile stress, which has a D value of 1.0023, shows the largest dielectric permittivity and tunability.
ACCESSION #
4710934

 

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