Room-temperature midinfrared electroluminescence from asymmetric AlSbAs/InAs/CdMgSe heterostructures grown by molecular beam epitaxy

Ivanov, S. V.; Solov'ev, V. A.; Moiseev, K. D.; Sedova, I. V.; Terent'ev, Ya. V.; Toropov, A. A.; Meltzer, B. Ya.; Mikhailova, M. P.; Yakovlev, Yu. P.; Kop'ev, P. S.
March 2001
Applied Physics Letters;3/19/2001, Vol. 78 Issue 12, p1655
Academic Journal
A hybrid double heterostructure with large asymmetric band offsets, combining AlAsSb/InAs (as a III-V part) and CdMgSe/CdSe (as a II-VI part), has been proposed as a basic element of a midinfrared laser structure design. The p-i-n diode structure has been successfully grown by molecular beam epitaxy and has exhibited an intense long-wavelength electroluminescence at 3.12 μm (300 K). A less than 10 times reduction of electroluminescence intensity from 77 to 300 K indicates an efficient carrier confinement in the InAs active layer due to high potential barriers in conduction and valence bands, estimated as ΔE[sub C]=1.28 eV and ΔE[sub V]∼1.6 eV. The type of band lineups at a coherent InAs/Cd[sub 1-x]Mg[sub x]Se interface is discussed for 0≤x≤0.15. © 2001 American Institute of Physics.


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