Effect of oxidation on the thermoelectric properties of PbTe and PbS epitaxial films

Rogacheva, E. I.; Krivulkin, I. M.; Nashchekina, O. N.; Sipatov, A. Yu.; Volobuev, V. V.; Dresselhaus, M. S.
March 2001
Applied Physics Letters;3/19/2001, Vol. 78 Issue 12, p1661
Academic Journal
We report on the thickness d dependences of the Seebeck coefficient, electrical conductivity, and Hall coefficient of PbTe and PbS epitaxial thin films (d=5-200 nm), prepared by thermal evaporation in vacuum and deposition on (001) KCl substrates. The oxidation of the films in air at 300 K leads to a sign inversion of the carrier type from n to p in films with d≤125 and 110 nm for PbTe and PbS, respectively. The observed d dependences are interpreted in terms of compensating acceptor states created by oxygen on the film surface. © 2001 American Institute of Physics.


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