Effect of annealing time and temperature on the formation of threading and projected range dislocations in 1 MeV boron implanted Si

Jones, K. S.; Jasper, Craig; Hoover, Allen
March 2001
Applied Physics Letters;3/19/2001, Vol. 78 Issue 12, p1664
Academic Journal
The effect of annealing temperature and time on the formation of threading dislocations was investigated for high energy boron implants into silicon. 1 MeV B[sup +] was implanted at a dose of 1x10[sup 14]/cm[sup 2] into <100> Si wafers. The wafers were subsequently annealed in either a rapid thermal annealing (RTA) furnace or a conventional furnace for times between 1 s and 1 h at temperatures between 700 and 1150 °C. Following this anneal the wafers were put through a standard complementary metal-oxide-semiconductor (CMOS) process. After processing, the threading dislocation density and projected range dislocation density were studied using etch pit density counts and transmission electron microscopy (TEM). The results show that annealing (either RTA or furnace) at temperatures above 1000 °C prior to CMOS processing reduced the high density of threading dislocations by 1-2 orders of magnitude. Quantitative plan-view TEM studies show that the mechanism for defect reduction is different for the RTA versus furnace annealing and may be ramp rate dependent. © 2001 American Institute of Physics.


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