Electron and trap dynamics in As-ion-implanted and annealed GaAs

Giniu˜nas, L.; Danielius, R.; Tan, H. H.; Jagadish, C.; Adomavicius, R.; Krotkus, A.
March 2001
Applied Physics Letters;3/19/2001, Vol. 78 Issue 12, p1667
Academic Journal
The ultrafast dynamics of As-ion-implanted and annealed GaAs is investigated using transmission pump-probe measurements. Carrier recombination time was found to increase from 4 to 40 ps with increasing annealing temperature. At lower annealing temperatures, the transmitted optical signal is dominated by induced absorption and at higher annealing temperatures this effect is replaced by induced transparency. © 2001 American Institute of Physics.


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