Electrical characterization of TiN/a-C/Si devices grown by magnetron sputtering at room temperature

Konofaos, N.; Angelis, C. T.; Evangelou, E. K.; Panayiotatos, Y.; Dimitriadis, C. A.; Logothetidis, S.
March 2001
Applied Physics Letters;3/19/2001, Vol. 78 Issue 12, p1682
Academic Journal
Amorphous carbon (α-C) films were deposited on Si substrates by magnetron sputtering at room temperature, followed by a deposition of TiN on top of the carbon films to form heterojunction devices. The electrical properties of the TiN/α-C/Si devices were characterized by capacitance-voltage, conductance-voltage, and current-voltage measurements as a function of temperature. The results showed that the devices behaved like metal-insulator-semiconductor devices at low temperatures, while at higher temperatures, the carbon films exhibited a high internal conductivity and the overall performance was similar to that of heterojunction devices. The conductivity was adequately modeled and found to follow the thermionic field emission model. The TiN exhibited an excellent behavior as a metallic electrode of the devices. © 2001 American Institute of Physics.


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